参数资料
| 型号： | FSQ110 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/12页 |
| 文件大小： | 0K |
| 描述： | IC SWIT PWM GREEN CM OVP 8DIP |
| 标准包装： | 50 |
| 系列： | FPS™ |
| 输出隔离： | 隔离 |
| 频率范围： | 92kHz ~ 108kHz |
| 输入电压： | 9 V ~ 20 V |
| 输出电压： | 650V |
| 功率（瓦特）： | 17W |
| 工作温度： | -25°C ~ 85°C |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
| 其它名称： | FSQ110-ND FSQ110FS |
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In
addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. T A = 25°C, unless otherwise specified.
Symbol
V DRAIN
V STR
Drain Pin Voltage
Vstr Pin Voltage
Characteristic
Value
650
650
Unit
V
V
I DM
Drain Current
Pulsed (5)
1.5
A
E AS
Single Pulsed Avalanche
Energy (6)
10
mJ
V CC
V FB
P D
T J
T A
T STG
Supply Voltage
Feedback Voltage Range
Total Power Dissipation
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature
20
-0.3 to V CC
1.40
Internally limited
-25 to +85
-55 to +150
V
V
W
° C
° C
° C
Notes :
5. Repetitive rating: Pulse width is limited by maximum junction temperature.
6. L = 24mH, starting T J = 25 ° C.
Thermal Impedance
T A = 25 ° C, unless otherwise specified. All items are tested with the standards JESD 51-2 and 51-10 (DIP).
Symbol
Parameter
Value
Unit
θ JA
Junction-to-Ambient Thermal
Resistance (7)
88.84
° C/W
θ JC
Junction-to-Case Thermal
Resistance (8)
13.94
° C/W
Notes :
7. Free standing with no heatsink; without copper clad.
(Measurement Condition - Just before junction temperature T J enters into OTP.)
8. Measured on the DRAIN pin close to plastic interface.
? 2007 Fairchild Semiconductor Corporation
FSQ110 Rev. 1.0.0
4
www.fairchildsemi.com
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