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| 型号： | FT0103BN |
| 英文描述： | Logic Level TRIACs |
| 中文描述： | 逻辑电平双向可控硅 |
| 文件页数： | 3/4页 |
| 文件大小： | 143K |
| 代理商： | FT0103BN |
Mar - 03
Fig. 1: Maximum power dissipation versus
RMS on-state current
0
20
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
40
60
80
100 120 140
P (W)
Fig. 2: Correlation between maximum
power dissipation and maximum allowable
temperature (Tamb and T tab).
T tab (oC)
-90
-95
-100
-105
-110
-115
-120
-125
Rth (j-a) oC/W
Fig. 3: RMS on-state current versus tab
temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Igt (Tj)
Igt (Tj = 25 oC)
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature.
-40 -20
0
60
80 100 120 140
Ih (Tj)
Ih (Tj = 25 oC)
40
20
1
10
100
1000
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
8
6
4
2
0
I TSM (A)
Tj initial = 25 oC
1.00
0.10
0.01
Zth(j-a) / Rth(j-a)
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
1.2
1.0
0.8
0.6
0.4
0.2
0
I T(RMS) (A)
0
20
40
60
80
100
120
α
= 180 o
10
30
50
70
90
110
130
Igt
Ih
0.0 0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.2 0.3 0.4 0.5 0.6 0.7 0.8
P (W)
Rth (j-l) oC/W
Standard foot print, e(Cu) = 35 μm
α
180 o
α
0.9 1.0
α
= 180 o
α
= 120 o
α
= 90 o
α
= 60 o
α
= 30 o
Tamb (oC)
Tj (oC)
Number of cycles
tp (s)
T tab (oC)
IT(RMS)(A)
FT01...N
SURFACE MOUNT TRIAC
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| FT0110BA | Standard TRIACs |
| FT0110BN | Standard TRIACs |
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