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参数资料
| 型号： | FT0107MN00RB |
| 元件分类： | 晶闸管 |
| 英文描述： | 600 V, 1 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 封装： | PLASTIC PACKAGE-4 |
| 文件页数： | 2/4页 |
| 文件大小： | 173K |
| 代理商： | FT0107MN00RB |
Electrical Characteristics
FAGOR
TRIAC
CURRENT
CASE
VOLTAGE
SENSITIVITY
F T
01
02 B
N 00
FORMING
RB
PACKAGING
P
PART NUMBER INFORMA
ART NUMBER INFORMATION
TION
FT01...N
(1) Minimum IGT is guaranted at 5% of IGT max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
LOGIC LEVEL TRIAC
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
IGT (1)
Gate Trigger Current
VD = 12 VDC , RL = 33
W, Tj = 25 C Q1÷Q3 MAX
mA
VTM (2)
On-state Voltage
IT = 1.1 Amp, tp = 380 s, Tj = 25 C
MAX
1.5
V
VGT
Gate Trigger Voltage
VD = 12 VDC , RL = 33
W, Tj = 25 C Q1÷Q3 MAX
1.3
V
VGD
Gate Non Trigger Voltage
VD = VDRM , RL = 3.3K
W, Tj = 125 C Q1÷Q3 MIN
0.2
V
IL
Latching Current
IG = 1.2 IGT, Tj = 25 C
Q1, Q3 MAX
mA
dV/dt (2) Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open
MIN
V/s
Rth(j-a)
Thermal Resistance
Junction-Ambient
Quadrant
C/W
Rth(j-c)
Thermal Resistance
for AC 360 conduction angle
80
C/W
2
S =5cm
(dv/dt)c= 10 V/s
Tj = 125 C
MIN
A/ms
Tj = 125 C
IH (2)
Holding Current
IT = 50 mA , Gate open, Tj = 25 C
MAX
mA
Q2
MAX
mA
(dI/dt)c (2) Critical Rate of Current Rise (dv/dt)c= 0.1 V/s
Tj = 125 C
MIN
A/ms
Vt(o) (2)
Threshold Voltage
Tj = 125 C
MAX
0.95
V
rd (2)
Dynamic Resistance
Tj = 125 C
MAX
1000
m
W
IDRM/IRRM
Off-State Leakage Current VD = VDRM ,
Tj = 125 C
MAX
0.5
mA
VR = VRRM ,
Tj = 25 C
MAX
5
A
Junction-Case
60
Q1÷Q4 MAX
1.3
V
Q1÷Q4 MIN
0.2
V
Q1,Q3,Q4
MAX
mA
Q4
MAX
mA
without snubber
Tj = 125 C
MIN
09
07
10
5
10
7
15
20
25
10
15
10
05
5
04
5
02
3
03
3
5
10 20 20 20 50
10 10
10
20 20
10
15
7
77
1.2
2.5
1.8 1.8
0.6 0.9 0.9
1.5
1.8
0.9
1.2
0.6
Apr - 06
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