参数资料
型号: FT24C02A-5LR-T
厂商: Fremont Micro Devices USA
文件页数: 8/20页
文件大小: 0K
描述: IC EEPROM 2KBIT 1MHZ SOT23-5
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 2K (256 x 8)
速度: 400kHz,1MHz
接口: I²C,2 线串口
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: SC-74A,SOT-753
供应商设备封装: SOT-23-5
包装: 标准包装
其它名称: 1219-1065-6
FT24C02A
(C) RANDOM READ
Random read is a two-steps process. The first step is to initialize the internal address counter with a
target read address using a “dummy write” instruction. The second step is a current address read.
To initialize the internal address counter with a target read address, the micro-controller issues a
START bit first, follows by a valid device address with the read/write bit (8 th ) set to “0”. The EEPROM
will then acknowledge. The micro-controller will then send the address word. Again the EEPROM
will acknowledge. Instead of sending a valid written data to the EEPROM, the micro-controller
performs a current address read instruction to read the data. Note that once a START bit is issued,
the EEPROM will reset the internal programming process and continue to execute the new instruction
- which is to read the current address.
S
T
A
R
T
DEVICE
ADDRESS
W
R
I
T
E
WORD
ADDRESS
DATA
S
T
O
P
SDA LINE
***
M
S
B
L R A M
S / C S
B W K B
L A
S C
B K
A
C
K
Figure 5: Byte Write
S
T
W
R
S
SDA LINE
A
R
T
DEVICE
ADDRESS
***
I
T
E
WORD
ADDRESS(N)
DATA(N)
...
T
O
P
DATA(N+X)
M
S
B
L R A M
S / C S
B W K B
L A
S C
B K
A
C
K
A
C
K
Figure 6: Page Write
S
T
A
R
T
DEVICE
ADDRESS
R
E
A
D
DATA
S
T
O
P
SDA LINE
***
M
S
B
L R A
S / C
B W K
N
O
A
C
K
Figure 7: Current Address Read
DS3011B-page 8
? 2009 Fremont Micro Devices Inc.
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