- 您现在的位置：买卖IC网 > PDF目录3924 > FT24C512A-USG-T (Fremont Micro Devices USA)IC EEPROM 512KBIT 1MHZ 8SOP PDF资料下载
参数资料
| 型号： | FT24C512A-USG-T |
| 厂商： | Fremont Micro Devices USA |
| 文件页数： | 5/17页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 512KBIT 1MHZ 8SOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 512K (64K x 8) |
| 速度： | 400kHz，1MHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 其它名称： | 1219-1108-6 |
FT24C512A
DEVICE ADDRESSING
The 2-wire serial bus protocol mandates an 8 bits device address word after a START bit condition to
invoke a valid read or write command. The first four most significant bits of the device address must be
1010, which is common to all serial EEPROM devices. The next three bits are device address bits. These
three device address bits (5 th , 6 th and 7 th ) are to match with the external chip select/address pin states. If a
match is made, the EEPROM device outputs an ACKNOWLEDGE signal after the 8 th read/write bit,
otherwise the chip will go into STANDBY mode. However, matching may not be needed for some or all
device address bits (5 th , 6 th and 7 th ) as noted below. The last or 8th bit is a read/write command bit. If the
8 th bit is at VIH then the chip goes into read mode. If a “0” is detected, the device enters programming
mode.
WRITE OPERATION
(A)
(B)
(C)
BYTE WRITE
A write operation requires two 8-bit data word address following the device address word and
ACKNOWLEDGE signal. Upon receipt of this address, the EEPROM will respond with a “0” and then
clock in the first 8-bit data word. Following receipt of the 8-bit data word, the EEPROM will again
output a “0”. The addressing device, such as a microcontroller, must terminate the write sequence
with a STOP condition. At this time the EEPROM enters into an internally-timed write cycle state. All
inputs are disabled during this write cycle and the EEPROM will not respond until the writing is
completed (figure 5).
PAGE WRITE
The 512K EEPROM are capable of 128-byte page write.
A page write is initiated the same way as a byte write, but the microcontroller does not send a STOP
condition after the first data word is clocked in. The microcontroller can transmit up to 127 more data
words after the EEPROM acknowledges receipt of the first data word. The EEPROM will respond
with a “0” after each data word is received. The microcontroller must terminate the page write
sequence with a STOP condition (see Figure 6).
The lower 7 bits of the data word address are internally incremented following the receipt of each data
word. The higher data word address bits are not incremented, retaining the memory page row
location. If more than 128 data words are transmitted to the EEPROM, the data word address will
“roll over” and the previous data will be overwritten.
ACKNOWLEDGE POLLING
ACKNOWLEDGE polling may be used to poll the programming status during a self-timed internal
programming. By issuing a valid read or write address command, the EEPROM will not acknowledge
at the 9 th clock cycle if the device is still in the self-timed programming mode. However, if the
programming completes and the chip has returned to the STANDBY mode, the device will return a
valid ACKNOWLEDGE signal at the 9 th clock cycle.
? 2009 Fremont Micro Devices Inc.
DS3009E-page 5
相关PDF资料 |
PDF描述 |
|---|---|
| AYF534835 | CONN SOCKET FPC 0.5MM 48POS SMD |
| AYF534735 | CONN SOCKET FPC 0.5MM 47POS SMD |
| FH52-40S-0.5SH | CONN FFC/FPC 0.5MM SMD 40POS |
| 345-026-523-201 | CARDEDGE 26POS DUAL .100 GREEN |
| 345-026-521-804 | CARDEDGE 26POS DUAL .100 GREEN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FT24C512A-USR-B | 功能描述:IC EEPROM 512KBIT 1MHZ 8SOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (64K x 16) 速度:150ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| FT24C512A-USR-T | 功能描述:IC EEPROM 512KBIT 1MHZ 8SOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (64K x 16) 速度:150ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| FT24C512A-UTG-B | 功能描述:IC EEPROM 512KBIT 1MHZ 8TSSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (64K x 16) 速度:150ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| FT24C512A-UTG-T | 功能描述:IC EEPROM 512KBIT 1MHZ 8TSSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (64K x 16) 速度:150ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| FT24C512A-UTR-B | 功能描述:IC EEPROM 512KBIT 1MHZ 8TSSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (64K x 16) 速度:150ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
发布紧急采购，3分钟左右您将得到回复。