- 您现在的位置：买卖IC网 > PDF目录3930 > FT93C56A-ISR-T (Fremont Micro Devices USA)IC EEPROM 2KBIT 2MHZ 8SOP PDF资料下载
参数资料
| 型号： | FT93C56A-ISR-T |
| 厂商： | Fremont Micro Devices USA |
| 文件页数： | 5/19页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 2KBIT 2MHZ 8SOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K（256 x 8 或 128 x 16） |
| 速度： | 250kHz，1MHz，2MHz |
| 接口： | 3 线串口 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 其它名称： | 1219-1134-6 |
93C46/A, 93C56/A, 93C66/A
INSTRUCTION SETS DESCRIPTION
(A) READ
The Read (READ) instruction contains the Address code for the memory location to be read. After the
instruction and address are decoded, data from the selected memory location is available at the serial output pin
DO. Output data changes are synchronized with the rising edges of serial clock SK. It should be noted that when
a dummy bit (logic “0”) precedes the 8- or 16-bit data output string.
(B) ERASE/WRITE ENABLE
To assure data integrity, the part automatically goes into the Erase/Write Disable (EWDS) state when power is
first applied. An Erase/Write Enable (EWEN) instruction must be executed first before any programming
instructions can be carried out. Please note that once in the Erase/Write Enable state, programming remains
enabled until an Erase/Write Disable (EWDS) instruction is executed or V CC power is removed from the part.
(C) ERASE/WRITE DISABLE
To protect against accidental data disturb, the Erase/Write Disable (EWDS) instruction disables all
programming modes and should be executed after all programming operations. The operation of the READ
instruction is independent of both the EWEN and EWDS instructions and can be executed at any time.
(D) ERASE
The Erase (ERASE) instruction programs all bits in the specified memory location to the logical “1” state. The
self-timed erase cycle starts once the ERASE instruction and address are decoded. The DO pin outputs the
READY/BUSY status of the part if CS is brought high after being kept low for a minimum of 250 ns (t CS ). A
logic “1” at pin DO indicates that the selected memory location has been erased, and the part is ready for
another instruction.
(E) WRITE
The Write (WRITE) instruction contains the 8 or 16 bits of data to be written into the specified memory location.
The self-timed programming cycle, t WP , starts after the last bit of data is received at serial data input pin DI. The
DO pin outputs the READY/BUSY status of the part if CS is brought high after being kept low for a minimum
of 250 ns (t CS ). A logic “0” at DO indicates that programming is still in progress. A logic “1” indicates that the
memory location at the specified address has been written with the data pattern contained in the instruction and
the part is ready for further instructions. A READY/BUSY status cannot be obtained if the CS is brought high
after the end of the self-timed programming cycle, t WP .
(F) ERASE ALL
The Erase All (ERAL) instruction programs every bit in the memory array to the logic “1” state and is primarily
used for testing purposes. The DO pin outputs the READY/BUSY status of the part if CS is brought high after
being kept low for a minimum of 250 ns (t CS ). The ERAL instruction is valid only at V CC = 5.0V ± 10%.
(G) WRITE ALL
The Write All (WRAL) instruction programs all memory locations with the data patterns specified in the
instruction. The DO pin outputs the READY/BUSY status of the part if CS is brought high after being kept low
for a minimum of 250 ns (t CS ). The WRAL instruction is valid only at V CC = 5.0V ± 10%.
? 2007 Fremont Micro Devices Inc.
DS3020D-page 5
相关PDF资料 |
PDF描述 |
|---|---|
| FT24C02A-UTG-T | IC EEPROM 2KBIT 1MHZ 8TSSOP |
| FT24C02A-UTR-T | IC EEPROM 2KBIT 1MHZ 8TSSOP |
| 395-024-521-801 | CARD EDGE 24POS DL .100X.200 BLK |
| 395-024-521-204 | CARD EDGE 24POS DL .100X.200 BLK |
| 395-024-521-202 | CARD EDGE 24POS DL .100X.200 BLK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FT93C56A-ITR-B | 功能描述:IC EEPROM 2KBIT 2MHZ 8TSSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (64K x 16) 速度:150ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| FT93C56A-ITR-T | 功能描述:IC EEPROM 2KBIT 2MHZ 8TSSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:1M (64K x 16) 速度:150ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| FT93C56A-UDR-B | 功能描述:IC EEPROM 2KBIT 2MHZ 8DIP 制造商:fremont micro devices usa 系列:- 包装:管件 零件状态:新产品 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:2K（256 x 8，128 x 16） 速度:250kHz，1MHz，2MHz 接口:3 线串口 电压 - 电源:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TA） 封装/外壳:8-DIP（0.300"，7.62mm） 供应商器件封装:8-DIP 标准包装:50 |
| FT93C56A-USR-B | 功能描述:IC EEPROM 2KBIT 2MHZ 8SOP 制造商:fremont micro devices usa 系列:- 包装:管件 零件状态:新产品 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:2K（256 x 8，128 x 16） 速度:250kHz，1MHz，2MHz 接口:3 线串口 电压 - 电源:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TA） 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SOP 标准包装:100 |
| FT93C56A-USR-T | 功能描述:IC EEPROM 1KBIT 2MHZ 8SOP 制造商:fremont micro devices usa 系列:- 包装:剪切带（CT） 零件状态:新产品 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:2K（256 x 8，128 x 16） 速度:250kHz，1MHz，2MHz 接口:3 线串口 电压 - 电源:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C（TA） 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SOP 标准包装:1 |
发布紧急采购，3分钟左右您将得到回复。