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参数资料
| 型号： | FZT4403 |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | SOT223 PNP SILICON PLANAR SWITCHING TRANSISTOR |
| 中文描述： | 进步党的SOT223硅平面开关晶体管 |
| 文件页数： | 1/1页 |
| 文件大小： | 24K |
| 代理商： | FZT4403 |
SOT223 PNP SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 4 JUNE 1996
%
PARTMARKING DETAIL
FZT4403
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-5
V
Continuous Collector Current
I
C
-600
mA
Power Dissipation at T
amb
=25°C
P
tot
1.5
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-40
V
I
C
=-0.1mA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-40
V
I
C
=-1mA
Emitter Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-0.1mA
Base Cut-off Current
I
BEX
I
CEX
-0.1
μ
A
μ
A
V
CE
=-35V, V
EB(OFF)
=-0.4V
V
CE
=-35V, V
EB(OFF)
=-0.4V
Collector-Emitter
Cut-off Current
-0.1
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.4
-0.75
V
V
I
C
=-150mA, I
B
=-15mA*
I
C
=-500mA, I
B
=-50mA*
I
C
=-150mA, I
B
=-15mA*
I
C
=-500mA, I
B
=-50mA*
I
C
=-0.1mA, V
=-1V
I
C
=-1mA, V
CE
=-1V
I
C
=-10mA, V
CE
=-1V
I
C
=-150mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
=-50mA, V
CE
=-5V
f=100MHz
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.75
-0.95
-1.3
V
V
Static Forward
Current Transfer Ratio
h
FE
30
60
100
100
20
300
Transition Frequency
f
T
200
MHz
Output Capacitance
C
obo
8.5
pF
V
=-10V, f=100KHz
I
E
=0
I
C
=0, f=100kHZ
Input Capacitance
*Measured under pulsed conditions. Pulse width=300
μ
s.
C
ibo
30
pF
FZT4403
C
C
E
B
3 - 300
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| FZT4403TA | 功能描述:两极晶体管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| FZT4403TC | 功能描述:两极晶体管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| FZT458 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| FZT458TA | 功能描述:两极晶体管 - BJT NPN High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| FZT458TC | 功能描述:两极晶体管 - BJT NPN High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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