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参数资料
| 型号： | G10519-14 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | InGaAs APD with preamp |
| 中文描述： | 铟镓砷APD的与前置放大器 |
| 文件页数： | 1/2页 |
| 文件大小： | 69K |
| 代理商： | G10519-14 |
Features
l High-speed response: 2.7 Gbps
l High sensitivity: 27 mV/W (λ=1.55 m, M=10)
l Differential output
l Wide dynamic range: -5 to -33 dBm
l Optical return loss: 35 dB
l Isoration type: Housing and signal ground are
electrically isorated.
Applications
l Optical fiber communications
l SDH STM-16 long Haul
PHOTODIODE
InGaAs APD with preamp
ROSA, 1.3/1.55 m, 2.7 Gbps
G10519-14
PRELIMINARY DATA
Feb. 2007
1
s Absolute maximum ratings
Parameter
Symbol
Value
Unit
Supply voltage
Vcc
-0.5 Min., +5 Max.
V
Reverse voltage (APD)
VR Max.
0 to VBR
V
Reverse current (APD)
IR
2mA
Forward current (APD)
IF
0
mA
Operating temperature *
1
Topr
-20 to +75
°C
Storage temperature *
1
Tstg
-40 to +85
°C
*1: No condensation
s
s Electrical and optical characteristics
(Ta=25 °C,
λ=1.55 m, Vcc=3.3 V, Vee=0 V, RL=50 *2, M=10, unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Responsivity
R
M=1, Pin= -27 dBm, Tc=25 °C
0.8
0.9
-
A/W
Supply current
Icc
Dark state, RL=
∞
-
25
35
mA
Cut-off frequency
fc
Pin= -27 dBm, -3 dB
1.7
2.0
-
GHz
Low cut-off frequency
fc-L
Pin= -27 dBm, -3 dB
-
7
100
kHz
Trans-impedance *
3
Tz
RL=50
, f=100 MHz
2
3
-
k
Breakdown voltage
VBR
ID=100 A, Dark state, Tc=25 °C
40
55
65
V
Temperature coefficient of VBR
-
Tc= -20 °C to 75 °C
-
0.11
0.16
V/°C
Minimum receivable sensitivity
Pmin
-
-33
-31
Maximum receivable sensitivity
Pmax
2.7 Gbps, NRZ, PRBS=2
23-1
BER=10
-10,
Extinction ratio=8.2 dB
VR: the best voltage
-7
-5
-
dBm
Dark current
ID
Dark state,
VR=0.9 × VBR, Tc=25 °C
-
40
80
nA
Optical return loss
ORL
λ=1.31/1.55 m
27
35
-
dB
*2: Output: capacitive coupling
*3: Single-ended (Vout+) measurement
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