参数资料
型号: G1737
厂商: Hamamatsu Photonics
英文描述: GaAsP photodiode
中文描述: 镓砷磷光电二极管
文件页数: 2/4页
文件大小: 176K
代理商: G1737
GaAsP photodiode
Diffusion type
0
0.1
0.2
0.3
0.4
0.5
200
400
600
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
800
(Typ. Ta=25 C)
WAVELENGTH (nm)
(Typ.)
TEMPERATURE
COEFFICIENT
(%/
C)
400
200
-0.5
0
+0.5
+1.5
+1.0
600
800
LOAD RESISTANCE (
)
(Typ. Ta=25 C, VR=0 V)
RISE
TIME
10
3
10
4
10
2
100
ns
1
s
10
ms
1
ms
100
s
10
s
10
5
10
6
G1737, G1740
G1736
G1735, G1738
G3297
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
DARK
CURRENT
0.01
0.1
0.001
100
fA
1
pA
1
nA
100
pA
10
pA
110
G1737, G1740
G1735, G1738, G3297
G1736
AMBIENT TEMPERATURE (C)
(Typ. VR=10 mV)
SHUNT
RESISTANCE
020
-20
10 M
1 G
100 M
10 T
1 T
100 G
10 G
40
60
80
G1737, G1740
G1735, G1738, G3297
G1736
INCIDENT LIGHT LEVEL (lx)
(Typ. Ta=25 C, A light source fully illuminated)
OUTPUT
CURRENT
(A)
10
-14
10
-12
10
-10
10
-8
10
-6
10
-4
10
-2
10
-16
10
-16
10
-12
10
-14
10
0
10
-2
10
-4
10
-6
10
-8
10
-10
10
0
DEPENDENT ON NEP
RL=100
s
Spectral response
KGPDB0024EA
s
Photo sensitivity temperature characteristic
KGPDB0025EA
s
Rise time vs. load resistance
KGPDB0026EA
s
Dark current vs. reverse voltage
KGPDB0027EA
s
Shunt resistance vs. ambient temperature
KGPDB0028EA
s
Short circuit current linearity
KGPDB0008EA
相关PDF资料
PDF描述
G1738 GaAsP photodiode
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相关代理商/技术参数
参数描述
G1738 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:GaAsP photodiode
G1740 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:GaAsP photodiode
G1742 制造商:未知厂家 制造商全称:未知厂家 功能描述:GENERAL-PURPOSE PHOTOVOLTAIC CELL
G1746 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:GaAsP photodiode
G1747 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:GaAsP photodiode