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参数资料
| 型号： | G2711-01 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | GaAsP photodiode |
| 中文描述： | 镓砷磷光电二极管 |
| 文件页数： | 3/4页 |
| 文件大小： | 172K |
| 代理商： | G2711-01 |
InGaAs PIN photodiode
G8421/G8371/G5851 series
3
ELEMENT TEMPERATURE (C)
RESISTANCE
(
)
10
3
(Typ.)
10
4
10
5
10
6
-40
-20
0
20
0
0.4
0.8
1.2
1.6
CURRENT (A)
ELEMENT
TEMPERATURE
(
C)
0
-40
-60
-20
40
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
ONE-STAGE
TE-COOLED TYPE
TWO-STAGE
TE-COOLED TYPE
1.2
0
0.5
1.0
1.5
VOLTAGE (V)
CURRENT
(A)
1.0
0.6
0
0.8
1.4
1.6
(Typ. Ta=25 C, Thermal resistance of heatsink=3 C/W)
0.4
0.2
ONE-STAGE
TE-COOLED TYPE
TWO-STAGE
TE-COOLED TYPE
I Thermistor temperature characteristic
KIRDB0116EA
I Cooling characteristics of TE-cooler
KIRDB0231EA
I Current vs. voltage characteristics of TE-cooler
KIRDB0115EA
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