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参数资料
| 型号： | G3067 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | GaAsP photodiode |
| 中文描述： | 镓砷磷光电二极管 |
| 文件页数： | 2/4页 |
| 文件大小： | 172K |
| 代理商： | G3067 |
GaAsP photodiode
Diffusion type
0
0.1
0.2
0.3
0.4
0.5
200
400
600
WAVELENGTH (nm)
PHOTO
SENSITIVITY
(A/W)
800
(Typ. Ta=25 C)
WAVELENGTH (nm)
(Typ.)
TEMPERATURE
COEFFICIENT
(%/
C)
400
200
-0.5
0
+0.5
+1.5
+1.0
600
800
LOAD RESISTANCE (
)
(Typ. Ta=25 C, VR=0 V)
RISE
TIME
10
3
10
4
10
2
100
ns
1
s
10
ms
1
ms
100
s
10
s
10
5
10
6
G1116
G1117, G1120
G1115, G1118
G3067, G2711-01
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
DARK
CURRENT
0.01
0.1
0.001
100
fA
1
pA
1
nA
100
pA
10
pA
110
G1116
G1115, G1118
G2711-01, G3067
G1117, G1120
AMBIENT TEMPERATURE (C)
(Typ. VR=10 mV)
SHUNT
RESISTANCE
020
-20
10 M
1 G
100 M
10 T
1 T
100 G
10 G
40
60
80
G1116
G1115, G1118
G3067, G2711-01
G1117, G1120
INCIDENT LIGHT LEVEL (lx)
(Typ. Ta=25 C, A light source fully illuminated)
OUTPUT
CURRENT
(A)
10
-14
10
-12
10
-10
10
-8
10
-6
10
-4
10
-2
10
-16
10
-16
10
-12
10
-14
10
0
10
-2
10
-4
10
-6
10
-8
10
-10
10
0
Refer to NEP value in characteristic table.
RL=100
s
Spectral response
KGPDB0019EA
s
Photo sensitivity temperature characteristic
KGPDB0020EA
s
Rise time vs. load resistance
KGPDB0021EA
s
Dark current vs. reverse voltage
KGPDB0022EA
s
Shunt resistance vs. ambient temperature
KGPDB0023EA
s
Short circuit current linearity
KGPDB0008EA
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