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参数资料
| 型号： | G3VM-101DR |
| 厂商： | Omron Electronics Inc-EMC Div |
| 文件页数： | 2/3页 |
| 文件大小： | 0K |
| 描述： | RELAY SSR SPST 1A 100V 4-SMD |
| 标准包装： | 100 |
| 系列： | G3VM |
| 电路： | SPST-NO（1 Form A） |
| 输出类型： | AC，DC |
| 导通状态电阻： | 700 毫欧 |
| 负载电流： | 1A |
| 输入电压： | 1.33VDC |
| 电压 - 负载： | 0 ~ 100 V |
| 安装类型： | 表面贴装 |
| 端接类型： | 鸥翼型 |
| 封装/外壳： | 4-SMD（0.300"，7.62mm） |
| 供应商设备封装： | 4-SMD |
| 包装： | 管件 |
| 继电器类型： | 继电器 |
| 其它名称： | Z3512 |
G3VM-101AR/DR
■ Recommended Operating Conditions
Use the G3VM under the following conditions so that the Relay will operate properly.
MOS FET Relays
Item
Load voltage
(AC peak/DC)
Operating LED forward current
Continuous load current
(AC peak/DC)
Operating temperature
Symbol
V DD
I F
I O
Ta
Minimum
---
5
---
? 20
Typical
---
10
---
---
Maximum
80
25
1
65
Unit
V
mA
A
°C
■ Engineering Data
LED forward current vs.
Ambient temperature
I F - Ta
50
Continuous load current vs.
Ambient temperature
I O - Ta
1.5
LED forward current vs.
LED forward voltage
I F - V F
100
Ta = 25°C
40
10
1
30
1
20
0.5
0.1
10
0
0
0.01
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
0
0.5
1
1.5
2
Ambient temperature Ta (°C)
Continuous load current vs.
On-state voltage
I O - V ON
1.5
Ta = 25C
I F = 5mA
Ambient temperature Ta (°C)
On-state resistance vs.
Ambient temperature
R ON - Ta
500
I O = 1A
I F = 5mA, t < 1s
LED forward voltage V F (V)
Trigger LED forward current vs.
Ambient temperature
I FT - Ta
2
I O = 1A
t < 1s
400
0.5
300
1
200
-0.5
100
-1.5
0
0
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
On-state voltage V ON (V)
Turn ON, Turn OFF time vs.
LED forward current
t ON , t OFF - I F
Ambient temperature Ta (°C)
Turn ON, Turn OFF time vs.
Ambient temperature
t ON , t OFF - Ta
Ambient temperature Ta (°C)
Current leakage vs.
Ambient temperature
I LEAK - Ta
100
V DD = 20V
100
V DD = 20V
100
V OFF = 100V
R L = 200 ?
Ta = 25°C
R L = 200 ?
I F = 5mA
10
10
10
1
1
t on
1
t off
0.1
0.1
t off
0.1
t on
0.01
0.01
0.01
1
10
100
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
LED forward current I F (mA)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
■ Safety Precautions
? Refer to "Common Precautions" for all G3VM models.
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| G3VM-101DR(TR) | 功能描述:固态继电器-PCB安装 100V SPSTNO DIP4 SMT 1000mA 250ohm 200pF RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
| G3VM101DRTR | 制造商:Omron Electronic Components LLC 功能描述:HIGH CURRENT MOS FET - Tape and Reel |
| G3VM101ER | 制造商:Omron Electronic Components LLC 功能描述:HIGH CURRENT MOS FET - Rail/Tube 制造商:Omron Electronic Components LLC 功能描述:RELAY SSR SPST 2A 100V 6-SMD |
| G3VM-101ER | 功能描述:固态继电器-PCB安装 100V SPSTNO DIP6 SMT 2000mA 100ohm 1000pF RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
| G3VM-101ER(TR) | 功能描述:固态继电器-PCB安装 100V SPSTNO DIP6 SMT 2000mA 100ohm 1000pF RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT |
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