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参数资料
| 型号： | G4176-01 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | ULTRAFAST MSM PHOTODETECTORS |
| 中文描述： | 男男性接触者超快光电探测器 |
| 文件页数： | 3/4页 |
| 文件大小： | 117K |
| 代理商： | G4176-01 |
Symbol
Vb
Φ
Top(a)
Tstg
Unit
V
mW
°C
Symbol
λ
λp
A
Unit
nm
mm2
Value
450 to 870
850
0.2
1
TO-5
(Unified with SMA connector)
TO-18
Condition
Vb = 7 V
Radiant sensitivity
Dark Current
NEP*
G4176
G4176-01
Terminal Capacitance
G4176**
G4176-01
Rise Time
G4176
G4176-01
Fall Time
G4176
G4176-01
S
Id
A/W
pA
Min.
0.2
-
0.2 X 10
-15
0.2 X 10
-15
-
λ = 850 nm
Item
Symbol
Condition
Value
Unit
Typ.
0.3
100
3 X 10
-15
4 X 10
-15
0.3
0.5
30
50
30
50
Max.
-
300
-
0.4
0.6
40
80
40
80
Ct
tr
tf
10 to 90 %
90 to 10 %
λ = 850 nm
W/Hz1/2
pF
ps
Wa elength (nm)
Radiant
Sensitivity
(A/W)
10
0
10
-1
10
-2
10
-3
500
300
900
700
600
400
1000
800
(Vb = 7 V)
G4176 SERIES
(Vb = 7 V)
Output
(arb.
unit)
Time (0.1ns/div)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
(Vb = 7 V)
ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs)
Item
Maximum Bias Voltage
Maximum Light Input
Pulsed Light
CW to Pulsed Light
Operating Temperature
Storage Temperature
ABSOLUTE MAXIMUM RATINGS (Ta=25
°C)
GENERAL CHARACTERISTICS (Ta=25
°C)
Condition
Pulse width
1ns
Pulse width
1ns
Value
10
50
5
-40 to +85
-40 to +100
ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25
°C, Vb=7V)
Item
Spectral Response Range
Peak Response Wavelength
Effective Sensitive Area
Chip Size
Package
G4176
G4176-01
*Noise Equivalent Power
**Value on Chip
Figure 1: Optical Pulse Response
G4176
(Including time response of light source, bias-tee and oscilloscope)
G4176-01
(Including time response of light source, assembly circuit and oscilloscope)
Output
(arb.
unit)
Time (0.1ns/div)
Figure 2: Spectral Response
Symbol
Vb
Φ
Top(a)
Tstg
Unit
V
mW
°C
Symbol
λ
λp
A
Unit
nm
mm2
Value
850 to 1650
1500
0.2
1
TO-5
(Unified with SMA connector)
TO-18
Condition
Vb = 10 V
Radiant sensitivity
Dark Current
NEP*
G7096
G7096-01
Terminal Capacitance
G7096**
G7096-01
Rise Time
G7096
G7096-01
Fall Time
G7096
G7096-01
S
Id
A/W
A
Min.
0.2
-
0.2 X 10
-10
0.2 X 10
-10
-
λ = 1.3
m
Item
Symbol
Condition
Value
Unit
Typ.
0.4
5
2 X 10
-10
3 X 10
-10
0.7
0.9
40
80
120
160
Max.
-
20
-
0.8
1.0
60
100
160
200
Ct
tr
tf
10 to 90 %
90 to 10 %
λ = 1.3
m
W/Hz1/2
pF
ps
W
l
th (
)
Radiant
Sensitivity
(A/W)
(Vb = 10 V)
G7096 SERIES
(Vb = 10 V)
Output
(arb.
unit)
Time (0.1ns/div)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
(Vb = 10 V)
Item
Maximum Bias Voltage
Maximum Light Input
Pulsed Light
CW to Pulsed Light
Operating Temperature
Storage Temperature
ABSOLUTE MAXIMUM RATINGS (Ta=25
°C)
GENERAL CHARACTERISTICS (Ta=25
°C)
Condition
Pulse width
1ns
Pulse width
1ns
Value
15
10
2
-40 to +85
-40 to +100
ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25
°C, Vb=10V)
Item
Spectral Response Range
Peak Response Wavelength
Effective Sensitive Area
Chip Size
Package
G7096
G7096-01
*Noise Equivalent Power
**Value on Chip
Figure 3: Optical Pulse Response
G7096
(Including time response of light source, bias-tee and oscilloscope)
G7096-01
(Including time response of light source, assembly circuit and oscilloscope)
Output
(arb.
unit)
Time (0.1ns/div)
Figure 4: Spectral Response
10
0
10
-1
10
-2
10
-3
1.0
0.6
1.8
1.4
1.2
0.8
1.6
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