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参数资料
| 型号： | G5851-11 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | InGaAs PIN photodiode |
| 中文描述： | 铟镓砷PIN光电二极管 |
| 文件页数： | 1/4页 |
| 文件大小： | 169K |
| 代理商： | G5851-11 |
PHOTODIODE
InGaAs PIN photodiode
Long wavelength type
G8421/G8371/G5851 series
Features
l Long cut-off wavelength: 1.9 m
l 3-pin TO-18 package: low price
l Thermoelectrically cooled TO-18 package: low dark current
l Active area: φ0.3 to φ3 mm
Applications
l Optical power meter
l Gas analyzer
l NIR (near infrared) photometry
I Specifications / Absolute maximum ratings
Absolute maximum ratings
Active
area
Thermistor
power
dissipation
TE-cooler
allowable
current
Reverse
voltage
VR
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material
Package
Cooling
(mm)
(mW)
(A)
(V)
(°C)
G8421-03
f0.3
G8421-05
f0.5
G8371-01
TO-18
f1
G8371-03
TO-5
Non-cooled
f3
-
-40 to +85 -55 to +125
G5851-103
f0.3
G5851-11
f1
G5851-13
TO-8
One-stage
TE-cooled
f3
1.5
G5851-203
f0.3
G5851-21
f1
G5851-23
TO-8
Two-stage
TE-cooled
f3
0.2
1.0
2
-40 to +70
-55 to +85
I Electrical and optical characteristics (Typ. unless otherwise noted)
Measurement
Condition
Element
temperature
Spectral
response
range
l
Peak
sensitivity
wavelength
lp
Photo
sensitivity
S
l=lp
Dark current
ID
VR=1 V
Cut-off
frequency
fc
VR=1 V
RL=50 W
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
resistance
Rsh
V4=10 mV
D*
l=lp
NEP
l=lp
Type No.
(°C)
(m)
(A/W)
Typ.
(nA)
Max.
(nA)
-3 dB
(MHz)
(pF)
(MW)
(cmHz1/2/W) (W/Hz1/2)
G8421-03
30
300
100
8
1.5
9 × 10-14
G8421-05
50
500
80
20
1
1.5 × 10-13
G8371-01
100
1000
40
80
0.5
2 × 10-13
G8371-03
25
0.9 to 1.9
2000 20000
3
800
0.05
5 × 1011
8 × 10-13
G5851-103
3
30
100
8
15
3 × 10-14
G5851-11
10
100
40
80
5
6 × 10-14
G5851-13
-10
0.9 to 1.87
200
2000
3
800
0.5
1.5 × 1012
2 × 10-13
G5851-203
1.5
15
100
8
35
2 × 10-14
G5851-21
5
50
40
80
10
4 × 10-14
G5851-23
-20
0.9 to 1.85
1.75
1.1
100
1000
3
800
1
2.5 × 1012
1.5 × 10-13
1
相关PDF资料 |
PDF描述 |
|---|---|
| G5851-13 | InGaAs PIN photodiode |
| G5851-203 | InGaAs PIN photodiode |
| G5851-21 | InGaAs PIN photodiode |
| G5851-23 | InGaAs PIN photodiode |
| G5852-103 | InGaAs PIN photodiode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| G5851-13 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
| G5851-203 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
| G5851-21 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
| G5851-23 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
| G5852-103 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
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