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参数资料
| 型号： | G5852-13 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | InGaAs PIN photodiode |
| 中文描述： | 铟镓砷PIN光电二极管 |
| 文件页数： | 1/4页 |
| 文件大小： | 255K |
| 代理商： | G5852-13 |
PHOTODIODE
InGaAs PIN photodiode
Long wavelength type (up to 2.1 m)
G8422/G8372/G5852 series
Features
l Cut-off wavelength: 2.1 m
l 3-pin TO-18 package: low price
l TE-cooled type TO-8 package: low dark current
l Active area: B0.3 to B3 mm
Applications
l Gas analyzer
l Water content analyzer
l NIR (Near Infrared) photometry
s Specifications / Absolute maximum ratings
Absolute maximum ratings
Active
area
Thermistor
power
dissipation
TE-cooler
allowable
current
Reverse
voltage
VR
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
D im e nsiona l
outline
Package
Cooling
(mm)
(mW)
(A)
(V)
(°C)
G8422-03
φ0.3
G8422-05
φ0.5
G8372-01
TO-18
φ1
G8372-03
TO-5
Non-cooled
φ3
-
-40 to +85
-55 to +125
G5852-103
φ0.3
G5852-11
φ1
G5852-13
TO-8
One-stage
TE-cooled
φ3
1.5
G5852-203
φ0.3
G5852-21
φ1
G5852-23
TO-8
Two-stage
TE-cooled
φ3
0.2
1.0
2
-40 to +70
-55 to +85
s Electrical and optical characteristics (Typ. unless otherwise noted)
M ea sure m ent
condition
Element
Te m perature
T
Spectral
response
range
λ
Peak
s e n s itiv ity
wa v e le n g th
λp
Photo
sensitivity
S
λ=λp
Dark current
ID
VR=1 V
Cut-off
freq uenc y
fc
VR=1 V
RL=50
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
re sistance
Rsh
V R = 10 m V
D
λ=λp
NEP
λ=λp
Type No.
(°C)
(m)
(A/W)
Typ.
(nA)
Max.
(nA)
(MHz)
(pF)
(M
)
(cm H z
1/2 /W ) (W/Hz1/2)
G8422-03
55
550
100
8
0.9
1.5 × 10
-13
G8422-05
125
1250
80
20
0.3
2.5 × 10
-13
G8372-01
500
5000
40
80
0.1
4 × 10
-13
G8372-03
25
0.9 to 2.1
5 (A) 50 (A)
3
800
0.01
2.5 × 10
11
1.5 × 10
-12
G5852-103
5.5
55
100
8
9
5 × 10
-14
G5852-11
50
500
40
80
1
1 × 10
-13
G5852-13
-10
0.9 to 2.07
500
5000
3
800
0.1
8 × 10
11
4 × 10
-13
G5852-203
3
30
100
8
18
3 × 10
-14
G5852-21
25
250
40
80
2
8 × 10
-14
G5852-23
-20
0.9 to 2.05
1.95
1.2
250
2500
3
800
0.2
1.2 × 10
12
3 × 10
-13
1
相关PDF资料 |
PDF描述 |
|---|---|
| G5852-203 | InGaAs PIN photodiode |
| G5852-21 | InGaAs PIN photodiode |
| G5852-23 | InGaAs PIN photodiode |
| G5853-103 | InGaAs PIN photodiode |
| G5853-11 | InGaAs PIN photodiode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| G5852-203 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
| G5852-21 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
| G5852-23 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
| G5853-103 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
| G5853-11 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
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