参数资料
型号: G6Z-1F-ARDC12
厂商: Omron Electronics Inc-EMC Div
文件页数: 14/16页
文件大小: 0K
描述: RELAY RF SPDT 10MA 12V
标准包装: 50
系列: G6Z
继电器类型: RF
线圈类型: 无锁存
线圈电流: 16.7mA
线圈电压: 12VDC
触点形式: SPDT(1 C 型)
触点额定值(电流): 10mA
切换电压: 30VAC,30VDC - 最小值
关闭电压(最大): 9 VDC
关闭电压(最小): 1.2 VDC
特点: 密封式 - 全部
安装类型: 表面贴装
端接类型: 鸥翼型
包装: 管件
触点材料: 铜(Cu),金(Au)
操作时间: 10ms
释放时间: 10ms
线圈功率: 200 mW
线圈电阻: 720 欧姆
工作温度: -40°C ~ 70°C
其它名称: G6Z 8066M
G6Z1FAR12DC
G6Z1FARDC12
Safety Precautions
■ Precautions for Correct Use
Substrate for High-frequency Characteristic Compensation
(75- Ω Models, E-shape or Y-shape)
Please observe the following precautions to prevent failure to
operate, malfunction, or undesirable effect on product performance.
(Unit: mm)
30.7
20
4-dia. throu g h-hole
High-frequency Characteristics Measurement Method
and Measurement Substrate
High-frequency characteristics for the G6Z are measured in the way
shown below. Consult your OMRON representative for details on
50- Ω models.
40
30
0.95
1
0.6-dia. throu g h-hole
Measurement Method for 75- Ω Models
G6Z
Network vector analyzer
(A g ilent Technolo g ies)
HP8753D
50 Ω/ 75 Ω adapter
(A g ilent Technolo g ies)
11852B-004
75- Ω terminatin g
resistance
Substrate Types
Material: FR-4 glass epoxy (glass cloth impregnated with epoxy
resin and copper laminated to its outer surface)
Thickness: 1.6 mm
Thickness of copper plating:18 μ m
(Unit: mm)
Through-hole Substrate (75- Ω Models, E-shape or Y-shape)
40
30
4-dia. throu g h-hole
0.4
1.4
Note:
Note:
1. The compensation substrate is used when measuring the
Relay’s insertion loss. The insertion loss is obtained by
subtracting the measured value for the compensation
substrate from the measured value with the Relay
mounted to the high-frequency measurement substrate.
2. For convenience, the diagrams of the high-frequency
measurement substrates given here apply both to models
with an E-shape terminal structure and to models with a
Y-shape terminal structure.
3.59
Note:
3. Be sure to mount a standoff tightly to the through-hole
substrate.
40
30
6.3
1
0.95
Note:
Note:
4. Use measuring devices, connectors, and substrates that
are appropriate for 50 Ω and 75 Ω respectively.
5. Ensure that there is no pattern under the Relay.
Otherwise, the impedance may be adversely affected and
the Relay may not be able to attain its full characteristics.
Handling
0.6-dia. throu g h-hole
Do not use the Relay if it has been dropped. Dropping the Relay may
adversely affect its functionality.
Protect the Relay from direct sunlight and keep the Relay under nor-
SMD-type Substrate (75- Ω Models, E-shape or Y-shape)
mal temperature, humidity, and pressure.
40
30
4-dia. throu g h-hole
Flow Soldering
(Unit: mm)
1.4
0.4
0.6-dia. throu g h-hole
Solder: JIS Z3282, H63A
Soldering temperature: Approx. 250 ° C (260 ° C if the DWS method is
used)
Soldering time: Approx. 5 s max. (approx. 2 s for the first time and
approx. 3 s for the second time if the DWS method is used)
Be sure to make a molten solder level adjustment so that the solder
will not overflow on the PCB.
40
30
6.3
3.91
1
0.95
124
High-frequency Relay
G6Z
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G6Z-1F-AR-DC12 功能描述:高频/射频继电器 12VDC 50 Ohm RoHS:否 制造商:Omron Electronics 触点形式:2 Form C (DPDT-BM) 触点电流额定值: 线圈电压:5 VDC 线圈类型:Non-Latching 频率: 功耗:100 mW 端接类型:Solder Terminal 绝缘:20 dB to 30 dB at 1 GHz 介入损耗:0.2 dB at 1 GHz
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