参数资料
型号: G6Z-1FE-TR DC12
厂商: Omron Electronics Inc-EMC Div
文件页数: 16/16页
文件大小: 0K
描述: RELAY RF SPDT 10MA 12V
标准包装: 300
系列: G6Z
继电器类型: RF
线圈类型: 无锁存
线圈电流: 16.7mA
线圈电压: 12VDC
触点形式: SPDT(1 C 型)
触点额定值(电流): 10mA
切换电压: 30VAC,30VDC - 最小值
关闭电压(最大): 9 VDC
关闭电压(最小): 1.2 VDC
特点: 密封式 - 全部
安装类型: 表面贴装
端接类型: 鸥翼型
包装: 带卷 (TR)
触点材料: 铜(Cu),金(Au)
操作时间: 10ms
释放时间: 10ms
线圈功率: 200 mW
线圈电阻: 720 欧姆
工作温度: -40°C ~ 70°C
其它名称: G6Z 8056B
G6Z-1FE-TRDC12
G6Z1FETR12DC
G6Z1FETRDC12
All sales are subject to Omron Electronic Components LLC standard terms and conditions of sale, which
can be found at http://www.components.omron.com/components/web/webfiles.nsf/sales_terms.html
ALL DIMENSIONS SHOWN ARE IN MILLIMETERS.
To convert millimeters into inches, multiply by 0.03937. To convert grams into ounces, multiply by 0.03527.
OMRON ELECTRONIC
COMPONENTS LLC
55 E. Commerce Drive, Suite B
Schaumburg, IL 60173
847-882-2288
OMRON ON-LINE
Global - http://www.omron.com
USA - http://www.components.omron.com
Cat. No. X301-E-1b
09/11
Specifications subject to change without notice
Printed in USA
High-frequency Relay
G6Z
相关PDF资料
PDF描述
G6E-134P-US DC12 RELAY GEN PURPOSE SPDT 2A 12V
PS7200E-1A-E3-A SSR OCMOS FET 250MA NO 4-SOP TR
PS7200B-1A-A SSR OCMOS FET 250MA NO 4-SOP
TQ2SL-L-24V RELAY TELECOM DPDT 2A 24V
G6Z-1F-TR DC9 RELAY RF SPDT 10MA 9V
相关代理商/技术参数
参数描述
G6Z1FETRDC3 制造商:Omron Electronic Components LLC 功能描述:EM RLY SPDT 0.5A 3VDC 45OHM SMD - Rail/Tube 制造商:Omron Electronic Components LLC 功能描述:RELAY RF SPDT 10MA 3V
G6Z-1FE-TR-DC3 制造商:Omron Electronic Components LLC 功能描述:Electromechanical Relay SPDT 0.5A 3VDC 45Ohm Surface Mount
G6Z1FETRDC5 制造商:Omron Electronic Components LLC 功能描述:EM RLY SPDT 0.5A 5VDC 125OHM SMD - Rail/Tube 制造商:Omron Electronic Components LLC 功能描述:RELAY RF SPDT 10MA 5V
G6Z-1FE-TR-DC5 制造商:Omron Electronic Components LLC 功能描述:Electromechanical Relay SPDT 0.5A 5VDC 125Ohm Surface Mount
G6Z-1F-R DC12 功能描述:高频/射频继电器 HF SMT 75 Relay RoHS:否 制造商:Omron Electronics 触点形式:2 Form C (DPDT-BM) 触点电流额定值: 线圈电压:5 VDC 线圈类型:Non-Latching 频率: 功耗:100 mW 端接类型:Solder Terminal 绝缘:20 dB to 30 dB at 1 GHz 介入损耗:0.2 dB at 1 GHz