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参数资料
| 型号： | G6ZU-1F DC9 |
| 厂商： | Omron Electronics Inc-EMC Div |
| 文件页数： | 14/16页 |
| 文件大小： | 0K |
| 描述： | RELAY RF SPDT 10MA 9V |
| 标准包装： | 50 |
| 系列： | G6Z |
| 继电器类型： | RF |
| 线圈类型： | 锁存，单线圈 |
| 线圈电流： | 22.2mA |
| 线圈电压： | 9VDC |
| 触点形式： | SPDT（1 C 型） |
| 触点额定值（电流）： | 10mA |
| 切换电压： | 30VAC，30VDC - 最小值 |
| 关闭电压（最大）： | 6.75 VDC |
| 特点： | 密封式 - 全部 |
| 安装类型： | 表面贴装 |
| 端接类型： | 鸥翼型 |
| 包装： | 管件 |
| 触点材料： | 铜（Cu），金（Au） |
| 操作时间： | 10ms |
| 释放时间： | 10ms |
| 线圈功率： | 200 mW |
| 线圈电阻： | 405 欧姆 |
| 工作温度： | -40°C ~ 70°C |
| 其它名称： | G6ZU-1FDC9 G6ZU1FDC9 |
Safety Precautions
■ Precautions for Correct Use
Substrate for High-frequency Characteristic Compensation
(75- Ω Models, E-shape or Y-shape)
Please observe the following precautions to prevent failure to
operate, malfunction, or undesirable effect on product performance.
(Unit: mm)
30.7
20
4-dia. throu g h-hole
High-frequency Characteristics Measurement Method
and Measurement Substrate
High-frequency characteristics for the G6Z are measured in the way
shown below. Consult your OMRON representative for details on
50- Ω models.
40
30
0.95
1
0.6-dia. throu g h-hole
Measurement Method for 75- Ω Models
G6Z
Network vector analyzer
(A g ilent Technolo g ies)
HP8753D
50 Ω/ 75 Ω adapter
(A g ilent Technolo g ies)
11852B-004
75- Ω terminatin g
resistance
Substrate Types
Material: FR-4 glass epoxy (glass cloth impregnated with epoxy
resin and copper laminated to its outer surface)
Thickness: 1.6 mm
Thickness of copper plating:18 μ m
(Unit: mm)
Through-hole Substrate (75- Ω Models, E-shape or Y-shape)
40
30
4-dia. throu g h-hole
0.4
1.4
Note:
Note:
1. The compensation substrate is used when measuring the
Relay’s insertion loss. The insertion loss is obtained by
subtracting the measured value for the compensation
substrate from the measured value with the Relay
mounted to the high-frequency measurement substrate.
2. For convenience, the diagrams of the high-frequency
measurement substrates given here apply both to models
with an E-shape terminal structure and to models with a
Y-shape terminal structure.
3.59
Note:
3. Be sure to mount a standoff tightly to the through-hole
substrate.
40
30
6.3
1
0.95
Note:
Note:
4. Use measuring devices, connectors, and substrates that
are appropriate for 50 Ω and 75 Ω respectively.
5. Ensure that there is no pattern under the Relay.
Otherwise, the impedance may be adversely affected and
the Relay may not be able to attain its full characteristics.
Handling
0.6-dia. throu g h-hole
Do not use the Relay if it has been dropped. Dropping the Relay may
adversely affect its functionality.
Protect the Relay from direct sunlight and keep the Relay under nor-
SMD-type Substrate (75- Ω Models, E-shape or Y-shape)
mal temperature, humidity, and pressure.
40
30
4-dia. throu g h-hole
Flow Soldering
(Unit: mm)
1.4
0.4
0.6-dia. throu g h-hole
Solder: JIS Z3282, H63A
Soldering temperature: Approx. 250 ° C (260 ° C if the DWS method is
used)
Soldering time: Approx. 5 s max. (approx. 2 s for the first time and
approx. 3 s for the second time if the DWS method is used)
Be sure to make a molten solder level adjustment so that the solder
will not overflow on the PCB.
40
30
6.3
3.91
1
0.95
124
High-frequency Relay
G6Z
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相关代理商/技术参数 |
参数描述 |
|---|---|
| G6ZU-1FE | 制造商:OMRON 制造商全称:Omron Electronics LLC 功能描述:High-frequency Relay |
| G6ZU-1FE DC12 | 功能描述:高频/射频继电器 Latching HF SMT 75 Relay RoHS:否 制造商:Omron Electronics 触点形式:2 Form C (DPDT-BM) 触点电流额定值: 线圈电压:5 VDC 线圈类型:Non-Latching 频率: 功耗:100 mW 端接类型:Solder Terminal 绝缘:20 dB to 30 dB at 1 GHz 介入损耗:0.2 dB at 1 GHz |
| G6ZU-1FE DC24 | 功能描述:高频/射频继电器 Latching HF SMT 75 Relay RoHS:否 制造商:Omron Electronics 触点形式:2 Form C (DPDT-BM) 触点电流额定值: 线圈电压:5 VDC 线圈类型:Non-Latching 频率: 功耗:100 mW 端接类型:Solder Terminal 绝缘:20 dB to 30 dB at 1 GHz 介入损耗:0.2 dB at 1 GHz |
| G6ZU-1FE DC3 | 功能描述:高频/射频继电器 75-Ohm, SMT Latching HF Relay RoHS:否 制造商:Omron Electronics 触点形式:2 Form C (DPDT-BM) 触点电流额定值: 线圈电压:5 VDC 线圈类型:Non-Latching 频率: 功耗:100 mW 端接类型:Solder Terminal 绝缘:20 dB to 30 dB at 1 GHz 介入损耗:0.2 dB at 1 GHz |
| G6ZU-1FE DC3 BY OMZ | 功能描述:高频/射频继电器 75-Ohm, SMT Latching HF Relay RoHS:否 制造商:Omron Electronics 触点形式:2 Form C (DPDT-BM) 触点电流额定值: 线圈电压:5 VDC 线圈类型:Non-Latching 频率: 功耗:100 mW 端接类型:Solder Terminal 绝缘:20 dB to 30 dB at 1 GHz 介入损耗:0.2 dB at 1 GHz |
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