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参数资料
| 型号： | G8198-01 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | InGaAs PIN photodiode |
| 中文描述： | 铟镓砷PIN光电二极管 |
| 文件页数： | 2/2页 |
| 文件大小： | 125K |
| 代理商： | G8198-01 |
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
InGaAs PIN photodiode
G8198 series
WINDOW
1 MIN.
3.5 ± 0.1
0.38
MAX.
4.2 ± 0.1
0.3
LEAD
1.65
PHOTOSENSITIVE
SURFACE
ANTI-REFLECTION COATING
WINDOW
l=1.55 m
2.7
±
0.2
7.62
MAX.
CASE
1.6
±
0.15
0.7
±
0.2
KIRDA0097EA
s Dimensional outline (unit: mm)
s Spectral response
0
1.2
1.0
0.8
0.6
0.4
0.2
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
(Typ. Ta=25 C)
WAVELENGTH (m)
PHOTO
SENSITIVITY
(A/W)
s Dark current vs. reverse voltage
1 pA
1 nA
100 pA
10 pA
0.01
0.1
1
10
100
(Typ. Ta=25 C)
REVERSE VOLTAGE (V)
DARK
CURRENT
G8198-02
G8198-01
s Terminal capacitance vs. reverse voltage
100 fF
10 pF
1 pF
0.01
0.1
1
10
100
(Typ. Ta=25 C)
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
G8198-02
G8198-01
s Frequency response
-5
10 MHz
100 MHz
1 GHz
10 GHz
FREQUENCY
RELATIVE
OUTPUT
(dB)
-10
-20
-15
0
5
(Typ. Ta=25 C,
λ=1.3 m, RL=50 , VR=2 V)
10
G8198-02
G8198-01
s Eye diagram (photodiode output)
2.48832 Gbps
Pin= -3 dBm
VR=2.0 V
100 ps/div.
KIRDB0160EA
KIRDB0161EA
KIRDB0162EA
KIRDB0163EA
Cat. No. KIRD1028E02
Jan. 2001 DN
2
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