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参数资料
| 型号： | G8370-10 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | InGaAs PIN photodiode |
| 中文描述： | 铟镓砷PIN光电二极管 |
| 文件页数： | 2/2页 |
| 文件大小： | 122K |
| 代理商： | G8370-10 |
InGaAs PIN photodiode
G8370-10
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KIRD1058E01
Jan. 2003 DN
(Typ. Ta=25 C)
0.8
1.0
1.4
1.6
1.8
WAVELENGTH (m)
PHOTO
SENSITIVITY
(A/W)
1.0
0.8
0.6
0.4
0.2
0
1.2
KIRDA0167EA
I Dimensional outline (unit: mm)
I Spectral response
I Dark current vs. reverse voltage
I Terminal capacitance vs. reverse voltage
KIRDB0284EA
2
0.01
0.1
10
REVERSE VOLTAGE (V)
DARK
CURRENT
1
(Typ. Ta=25 C)
1 nA
10 A
1 A
100 nA
10 nA
KIRDB0285EA
(Typ. Ta=25 C)
0.01
10
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
(nF)
1
100
10
0.1
1
KIRDB0286EA
16.5 ± 0.2
12.5 ± 0.2
15.0
±
0.2
0.1
0.3
±
0.1
1.3
±
0.1
2.2
±
0.1
10.5
13.7
±
0.3
ACTIVE AREA
10
PHOTOSENSITIVE
SURFACE
15.1 ± 0.3
0.5
LEAD
相关PDF资料 |
PDF描述 |
|---|---|
| G8370 | Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 450V; Case Size: 30x25 mm; Packaging: Bulk |
| G8370-01 | Aluminum Snap-In Capacitor; Capacitance: 180uF; Voltage: 450V; Case Size: 22x45 mm; Packaging: Bulk |
| G8370-02 | InGaAs PIN photodiode |
| G8370-03 | InGaAs PIN photodiode |
| G8370-05 | InGaAs PIN photodiode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| G8370-81 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
| G8370-82 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
| G8370-83 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
| G8370-85 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
| G8371-01 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
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