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| 型号： | G8605 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 420V; Case Size: 25x30 mm; Packaging: Bulk |
| 中文描述： | 铟镓砷PIN光电二极管 |
| 文件页数： | 1/4页 |
| 文件大小： | 247K |
| 代理商： | G8605 |
PHOTODIODE
InGaAs PIN photodiode
Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response
G8605 series
Features
l High-speed response
l Low noise
l Various active area sizes available from φ1 to φ5 mm
Applications
l Optical power meter
l Water content analyzer
l Laser diode life test
InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current to achieve high D*. One-stage (-10 C)
and two-stage (-20 C) thermoelectrically cooled types are provided.
Accessories (Optional)
l Preamp for InGaAs PIN photodiode
C4159-02
(High-speed type)
l Preamp for InGaAs PIN photodiode
C4159-03
(High sensitivity type)
l Heatsink for one-stage TE-cooled type
A3179
l Heatsink for two-stage TE-cooled type
A3179-01
l Temperature controller for TE-cooled type C1103-04
1
s Specifications / Absolute maximum ratings
Absolute maximum ratings
Active
area
Thermistor
power
dissipation
TE-cooler
allowable
current
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dim ensional
ou tlin e/
W in dow
m a te ria l *
Package
Cooling
(mm)
(mW)
(A)
(V)
(°C)
G8605-11
φ1
5
G8605-12
φ2
5
G8605-13
φ3
5
G8605-15
/K
One-stage
TE-cooled
φ5
1.5
2
G8605-21
φ1
5
G8605-22
φ2
5
G8605-23
φ3
5
G8605-25
/K
TO-8
Two-stage
TE-cooled
φ5
0.2
1.0
2
-40 to +70
-55 to +85
s Electrical and optical characteristics (Typ. unless otherwise noted)
M easurem ent
condition
Element
tem perature
S pec tral
respo nse
ran ge
λ
Pea k
sensitivity
w ave le ngth
λp
Photo
sensitivity
S
D a rk c u rre n t
ID
VR=1 V
Cut-off
freq ue ncy
fc
VR=1 V
RL=50
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
re sista n ce
Rsh
VR=10 mV
D
λ=λp
NEP
λ=λp
Type No.
(°C)
(m)
1.3 m
(A /W )
λ=λp
(A /W )
Typ .
(n A )
Ma x .
(n A )
(MHz)
(pF)
(M
)
(cm H z1/2/W ) (W/Hz
1/2)
G8605-11
0.07
0.35
18
150
1500
5 × 10
-15
G8605-12
0.3
1 .5
4
550
300
1 × 10
-14
G8605-13
15
2
1000
100
2 × 10
-14
G8605-15
-10
0.9 to 1 .6 7
2.5
1 2 .5
0.6
3500
30
2 × 10
13
3 × 10
-14
G8605-21
0.03
0.15
18
150
3000
3 × 10
-15
G8605-22
0.15
0.75
4
550
600
7 × 10
-15
G8605-23
0.5
2 .5
2
1000
200
1 × 10
-14
G8605-25
-20
0.9 to 1 .6 5
1.55
0.9
0 .95
1.2
6
0.6
3500
60
3 × 10
13
2 × 10
-14
* Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55
m peak)
相关PDF资料 |
PDF描述 |
|---|---|
| G8605-11 | Aluminum Snap-In Capacitor; Capacitance: 180uF; Voltage: 420V; Case Size: 25x30 mm; Packaging: Bulk |
| G8605-12 | Aluminum Snap-In Capacitor; Capacitance: 220uF; Voltage: 420V; Case Size: 25x35 mm; Packaging: Bulk |
| G8605-13 | Aluminum Snap-In Capacitor; Capacitance: 220uF; Voltage: 420V; Case Size: 30x30 mm; Packaging: Bulk |
| G8605-15 | Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 420V; Case Size: 35x30 mm; Packaging: Bulk |
| G8605-21 | Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 420V; Case Size: 30x40 mm; Packaging: Bulk |
相关代理商/技术参数 |
参数描述 |
|---|---|
| G8605_04 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
| G8605_11 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response |
| G8605-11 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
| G8605-12 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
| G8605-13 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
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