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参数资料
| 型号： | G8909-01 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | InGaAs PIN photodiode array |
| 中文描述： | 铟镓砷PIN光电二极管阵列 |
| 文件页数： | 2/3页 |
| 文件大小： | 111K |
| 代理商： | G8909-01 |
InGaAs PIN photodiode array
G8909-01
2
I Spectral response
KIRDB0002EB
I Dark current vs. reverse voltage
KIRDB0266EA
I Terminal capacitance vs. reverse voltage
KIRDB0267EA
KIRDB0268EA
I Dark current vs. temperature
I Cross-talk characteristic
KIRDB0269EA
WAVELENGTH (m)
PHOTO
SENSITIVITY
(A/W)
2.0
0.5
(Typ. Ta=25 C)
0.8
1.0
1.2
1.4
1.6
1.8
1
0.6
REVERSE VOLTAGE (V)
DARK
CURRENT
0.01
0.1
1
1 pA
10 pA
100 pA
100
(Typ. Ta=25 C)
1 nA
10
REVERSE VOLTAGE (V)
TERMINAL
CAPACITANCE
0.01
0.1
1
100 fF
1 pF
100
(Typ. Ta=25 C, f=1 MHz)
10 pF
10
TEMPERATURE (C)
DARK
CURRENT
20
30
50
10 pA
1 nA
80
(Typ. VR=5 V)
100 nA
100 pA
10 nA
70
40
60
POSITION X (m)
RELATIVE
SENSITIVITY
(%)
-250
-200
-100
0.01
1
0
(Typ. Ta=25 C,
λ=1.55 m, SPOT= 20 m, Pin=5 nW, VR=0.1 V)
100
0.1
10
-50
-150
250 m
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