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参数资料
| 型号： | G8921-01 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | GaAs PIN photodiode array |
| 中文描述： | GaAs PIN型光电二极管阵列 |
| 文件页数： | 2/2页 |
| 文件大小： | 115K |
| 代理商： | G8921-01 |
GaAs PIN photodiode array
G8921-01
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2002 Hamamatsu Photonics K.K.
Cat. No. KGPD1009E02
Jul. 2002 DN
0.15
0.25
6.4
2.30
1.0
0.2
±
0.05
ACTIVE AREA
CATHODE
0.06 × 4 ch
ANODE
2
I Spectral response
KGPDB0048EA
I Dark current vs. reverse voltage
KGPDB0049EA
I Terminal capacitance vs. reverse voltage
KGPDB0050EA
I Dimensional outline (unit: mm)
KGPDA0017EA
0
0.1
0.2
0.3
0.4
0.5
0.6
300
500
600
700
800
900
1000
400
(Typ. Ta=25 C)
PHOTO
SENSITIVITY
(A/W)
WAVELENGTH (nm)
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
DARK
CURRENT
1
0.1
0.01
10 fA
100 fA
100 pA
10 pA
1 pA
10
100
REVERSE VOLTAGE (V)
(Typ. Ta=25 C)
TERMINAL
CAPACITANCE
1
0.1
0.01
100 fF
10 pF
1 pF
10
100
I Cross-talk characteristic
KGPDB0051EA
0
100
200
300
400
500
0.001
1000
100
10
1
0.1
0.01
POSITION (m)
RELATIVE
SENSITIVITY
(%)
(Typ. Ta=25 C,
λ=830 nm, step: 5 m, Pin=20 nW, spot light size: 10 m)
n ch
n+1 ch
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PDF描述 |
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| G8925 | Aluminum Snap-In Capacitor; Capacitance: 3300uF; Voltage: 80V; Case Size: 25x45 mm; Packaging: Bulk |
| G8925-21 | InGaAs PIN photodiode with preamp |
| G8925-22 | InGaAs PIN photodiode with preamp |
| G8925-23 | InGaAs PIN photodiode with preamp |
| G8941 | Aluminum Snap-In Capacitor; Capacitance: 3900uF; Voltage: 80V; Case Size: 35x30 mm; Packaging: Bulk |
相关代理商/技术参数 |
参数描述 |
|---|---|
| G8921-01_04 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:GaAs PIN photodiode array |
| G8925 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode with preamp |
| G8925-21 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode with preamp |
| G8925-22 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode with preamp |
| G8925-23 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode with preamp |
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