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参数资料
| 型号： | G8941-02 |
| 厂商： | Hamamatsu Photonics |
| 英文描述： | Aluminum Snap-In Capacitor; Capacitance: 6800uF; Voltage: 80V; Case Size: 35x45 mm; Packaging: Bulk |
| 中文描述： | 铟镓砷PIN光电二极管 |
| 文件页数： | 1/3页 |
| 文件大小： | 139K |
| 代理商： | G8941-02 |
G8941 series
Features
l Active area
G8941-01:
φ1 mm
G8941-02:
φ0.5 mm
G8941-03:
φ0.3 mm
l Miniature package: 2 × 2 × 1 mm
l Precise chip position tolerance: ±0.075 mm
Applications
l LD monitor
PHOTODIODE
InGaAs PIN photodiode
Sub-mount type photodiode for LD monitor
1
I General rating
Parameter
G8941-01
G8941-02
G8941-03
Unit
Active area
f1
f0.5
f0.3
mm
I Absolute maximum ratings
Parameter
Symbol
Remark
G8941-01
G8941-02
G8941-03
Unit
Reverse voltage
VR
Max.
10
20
V
Operating
temperature
Topr
-40 to +85
°C
Storage
temperature
Tstg
*
-55 to +125
°C
* In N environment or in vacuum
I Electrical and optical characteristics (Ta=25 °C)
G8941-01
G8941-02
G8941-03
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Spectral
response range
l
0.9 to 1.7
m
l=1.31 m
0.8
0.9
-
0.8
0.9
-
0.8
0.9
-
Photo sensitivity
S
l=1.55 m
0.85
0.95
-
0.85
0.95
-
0.85
0.95
-
A/W
Dark current
ID
VR=5 V
-
1
5
-
0.5
2.5
-
0.3
1.5
nA
Shunt resistance
Rsh
VR=10 mV
-
100
-
300
-
1000
-
MW
Terminal
capacitance
Ct
VR=5 V,
f=1 MHz
-90
-
-12
-
5
-
pF
Cut-off
frequency
fc
VR=5 V,
RL=50 W
-
35
-
200
-
400
-
MHz
Noise equivalent
power
NEP
l=lp
2 × 10-14
8 × 10-15
4 × 10-15
W/Hz1/2
Detectivity
D*
l=lp
5 × 1012
cmHz1/2/W
相关PDF资料 |
PDF描述 |
|---|---|
| G8941-03 | Aluminum Snap-In Capacitor; Capacitance: 10000uF; Voltage: 35V; Case Size: 25x45 mm; Packaging: Bulk |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| G8941-03 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
| G8941L14R | 制造商:Glenair Inc 功能描述:ADAPTER - Bulk |
| G8948-126P | 制造商:Glenair Inc 功能描述:ADAPTER - Bulk |
| G8948-168NF | 制造商:Glenair Inc 功能描述:ADAPTER - Bulk |
| G8948-188NF | 制造商:Glenair Inc 功能描述:ADAPTER - Bulk |
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