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参数资料
| 型号： | GA150TS60U |
| 英文描述： | HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT |
| 中文描述： | 半桥式IGBT的相依甲-巴基斯坦超高速IGBT的FastTM |
| 文件页数： | 1/11页 |
| 文件大小： | 221K |
| 代理商： | GA150TS60U |
05/20/02
GA150TS60U
"HALF-BRIDGE" IGBT INT-A-PAK
Features
VCES = 600V
VCE(on) typ. = 1.7V
@VGE = 15V, IC = 150A
Parameter
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case - IGBT
—
0.28
RθJC
Thermal Resistance, Junction-to-Case - Diode
—
0.35
°C/W
RθCS
Thermal Resistance, Case-to-Sink - Module
0.1
—
Mounting Torque, Case-to-Heatsink
S
—
6.0
N m
Mounting Torque, Case-to-Terminal 1, 2 & 3
T
—
5.0
Weight of Module
200
—
g
Thermal / Mechanical Characteristics
Ultra-FastTM Speed IGBT
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
150
ICM
Pulsed Collector Current
Q
300
A
ILM
Peak Switching Current
R
300
IFM
Peak Diode Forward Current
300
VGE
Gate-to-Emitter Voltage
±20
V
VISOL
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
2500
PD @ TC = 25°C
Maximum Power Dissipation
440
W
PD @ TC = 85°C
Maximum Power Dissipation
230
TJ
Operating Junction Temperature Range
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
Benefits
.
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Very low conduction and switching losses
HEXFRED antiparallel diodes with ultra- soft
recovery
Industry standard package
UL approved
Generation 4 IGBT technology
Increased operating efficiency
Direct mounting to heatsink
Performance optimized for power conversion: UPS,
SMPS, Welding
Lower EMI, requires less snubbing
www.irf.com
1
PD - 50056D
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