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参数资料
| 型号： | GBJ2500 |
| 厂商： | Electronics Industry Public Company Limited |
| 英文描述： | SILICON BRIDGE RECTIFIERS |
| 中文描述： | 硅桥式整流器 |
| 文件页数： | 1/2页 |
| 文件大小： | 53K |
| 代理商： | GBJ2500 |
GBJ2500 - GBJ2510
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 25 Amperes
FEATURES :
* Glass Passivated Die Construction
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* High current capability
* Very good heat dissipation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 8.17 grams ( Approximaly )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
SYMBOL
GBJ
2500
GBJ
2501
GBJ
2502
GBJ
2504
GBJ
2506
GBJ
2508
GBJ
2510
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Current Tc = 100°C
IF(AV)
25
A
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
I
2
t
510
A
2S
Maximum Forward Voltage per Diode at IF = 12.5 A
VF
1.1
V
Maximum DC Reverse Current
Ta = 25
°C
IR
10
A
at Rated DC Blocking Voltage
Ta = 100
°C
IR(H)
500
A
Thermal Resistance, Junction to Case
R
θJC
0.6
°C/W
Operating Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
Note :
1. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
Page 1 of 2
Rev. 03 : September 9, 2005
RATING
IFSM
300
A
Dimensions in millimeters
C3
4.9
± 0.2
3.9
± 0.2
~
3.2 ± 0.1
~
1
±
0
.2
1
7
.5
±
0
.5
2
0
±
0
.3
0.7
± 0.1
1.0
± 0.1
2.7
± 0.2
30
± 0.3
7.5
±0.2
10
±0.2
+
7.5
±0.2
1
3
.5
±
0
.3
RBV25
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GBJ25005 | 功能描述:桥式整流器 25A 50V RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| GBJ25005_09 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:25A GLASS PASSIVATED BRIDGE RECTIFIER |
| GBJ25005_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:25A GLASS PASSIVATED BRIDGE RECTIFIER |
| GBJ25005_11 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:Voltage 50V ~ 1000V 25.0 Amp Glass Passivited Bridge Rectifiers |
| GBJ25005-BP | 功能描述:桥式整流器 25A 50V RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
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