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参数资料
| 型号： | GBU810 |
| 厂商： | DIODES INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 8.0A GLASS PASSIVATED BRIDGE RECTIFIER |
| 中文描述： | 8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, GBU, 4 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 66K |
| 代理商： | GBU810 |
e3
DS21227 Rev. 7 - 2
1 of 3
GBU8005 - GBU810
www.diodes.com
Diodes Incorporated
GBU8005 - GBU810
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Mechanical Data
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Notes:
1. Unit mounted on 50 x 50 x 1.6mm copper plate heatsink.
2. Non-repetitive, for t > 1.0ms and < 8.3ms.
3. Per element, measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
Case: GBU
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Tin. Solderable per MIL-STD-202,
Method 208
Polarity: Marked on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 Inch-pounds Maximum
Ordering Information: See Last Page
Marking: Date Code and Type Number
Weight: 6.6 grams (approximate)
Characteristic
Symbol
GBU
8005
GBU
801
GBU
802
GBU
804
GBU
806
GBU
808
GBU
810
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Forward Rectified Current (Note 1) @ TC = 100
°C
I(AV)
8.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
IFSM
200
A
Forward Voltage (per element)
@ IF = 4.0A
VFM
1.0
V
Peak Reverse Current
@ TC = 25
°C
at Rated DC Blocking Voltage
@ TC = 125
°C
IR
5.0
500
mA
I2t Rating for Fusing (t < 8.3ms) (Note 2)
I2t
166
A2s
Typical Total Capacitance per Element (Note 3)
CT
130
pF
Typical Thermal Resistance Junction to Case (Note 1)
RqJC
2.2
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
GBU
Dim
Min
Max
A
21.8
22.3
B
3.5
4.1
C
7.4
7.9
D
1.65
2.16
E
2.25
2.75
F
1.95
2.35
G
1.02
1.27
H
4.83
5.33
J
17.5
18.0
K
3.2 X 45
°
L
18.3
18.8
M
3.30
3.56
N
0.46
0.56
P
0.76
1.0
All Dimensions in mm
- ~ ~ +
A
B
K
D
E
F
G
H
J
M
N
P
L
C
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 200A Peak
Ideal for Printed Circuit Board Applications
UL Listed Under Recognized Component
Index, File Number E94661
Lead Free Finish, RoHS Compliant (Note 4)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GBU8-10 | 制造商:FRONTIER 制造商全称:Frontier Electronics. 功能描述:8A SILICON SINGLE-PHASE BRIDGE RECTIFIERS |
| GBU810C | 制造商:HY 制造商全称:HY ELECTRONIC CORP. 功能描述:SILICON BRIDGE RECTIFIERS |
| GBU810-G | 功能描述:桥式整流器 VR=1000V IAV=4.0A RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| GBU810GTB | 功能描述:BRIDGE RECT 1PHASE 1KV 8A GBU 制造商:smc diode solutions 系列:- 包装:剪切带（CT） 零件状态:在售 二极管类型:单相 技术:标准 电压 - 峰值反向（最大值）:1kV 电流 - 平均整流（Io）:8A 不同 If 时的电压 - 正向（Vf:1.1V @ 8A 不同?Vr 时的电流 - 反向漏电流:5μA @ 1000V 工作温度:-55°C ~ 150°C（TJ） 安装类型:通孔 封装/外壳:4-ESIP 供应商器件封装:GBU 标准包装:20 |
| GBU8-10-LFR | 制造商:FRONTIER 制造商全称:Frontier Electronics. 功能描述:8A SILICON SINGLE-PHASE BRIDGE RECTIFIERS |
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