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参数资料
| 型号： | GC4275-30 |
| 厂商： | MICROSEMI CORP-LOWELL |
| 元件分类： | PIN二极管 |
| 英文描述： | 70 V, SILICON, PIN DIODE |
| 文件页数： | 1/2页 |
| 文件大小： | 119K |
| 代理商： | GC4275-30 |
Control Devices
Microsemi – Lowell
75 Technology Drive, Lowell, MA 01851 Tel. (978) 442-5600
HIGH SPEED PIN DIODES
DESCRIPTION
The GC4200 series are high speed (cathode base) PIN
diodes made with high resistivity epitaxial silicon material.
These diodes are passivated with silicon dioxide for high
stability and reliability and have been proven by
thousands of device hours in high reliability systems.
These devices can withstand storage temperatures from
-65° to +200°C and will operate over the range from -55°
to +150°C. All devices meet or exceed military
environmental
specifications
of
MIL-S-19500.
The
GC4200 series will operate with as little as +10 mA
forward bias.
APPLICATIONS
The GC4200 series can be used in RF circuits as an
on/off element, as a switch, or as a current controlled
resistor in attenuators extending over the frequency
range from UHF through Ku band.
Switch applications include high speed switches (ECM
systems), TR switches, channel or antenna selection
switches (telecommunications), duplexers (radar) and
digital phase shifters (phased arrays).
The GC4200 series are also used as passive and active
limiters for low to moderate RF power levels.
Attenuator
type
applications
include
amplitude
modulators, AGC attenuators and power levelers.
ELECTRICAL SPECIFICATIONS: T A = 25°C
MODEL
NUMBER
BREAKDOWN
VOLTAGE
(IR=10uA MAX)
VB(MIN)(Volts)
JUNCTION
CAPACITANCE
1
Cj-10 (MAX)
(pF)
SERIES
RESISTANCE
2
(20 mA, 1 GHz)
RS20(MAX)
(Ohms)
CARRIER LIFETIME
(IR=6 mA, IF=10 mA)
TL(TYP)
(nS)
THERMAL
RESISTANCE
(MAX)
(C/W)
GC4270
70
0.06
1.5
100
80
GC4271
70
0.10
1.0
100
70
GC4272
70
0.20
0.8
100
70
GC4273
70
0.30
0.7
100
60
GC4274
70
0.40
0.6
100
50
GC4275
70
0.50
0.5
100
40
GC4210
100
0.06
1.5
200
80
GC4211
100
0.10
1.0
200
70
GC4212
100
0.20
0.75
200
70
GC4213
100
0.30
0.6
200
60
GC4214
100
0.40
0.5
200
50
GC4215
100
0.50
0.35
200
40
GC4220
250
0.06
2.5
500
80
GC4221
250
0.10
2.0
500
70
GC4222
250
0.20
1.5
500
70
GC4223
250
0.30
1.0
500
60
GC4224
250
0.40
0.8
500
50
GC4225
250
0.50
0.6
500
40
Notes:
1. Capacitance is measured at 1 MHz and -10 volts.
2. Resistance is measured using transmission loss techniques.
3. This series of devices is available in standard case styles 00, 15, 30, 35 and 85, plus other styles on request.
The tabulated specifications above are for the style 30 package. Diodes may also be available in other case styles.
Some limitations apply / contact factory for details.
Each type offers trade offs in series resistance, junction capacitance and carrier lifetime; the proper choice of which
depends on the end application. Reverse polarity diodes (NIP) and higher voltage PIN and NIP diodes are also
available. (See data sheets for GC4300, GC4400, and GC4500 series respectively.)
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