参数资料
| 型号： | GDBD4410 |
| 厂商： | IXYS |
| 文件页数： | 4/6页 |
| 文件大小： | 0K |
| 描述： | BOARD EVALUATION IXBD4410/11 |
| 标准包装： | 2 |
| 类型： | 电源管理：MOSFET 驱动器 |
| 适用于相关产品： | IXBD4410，IXBD4411 |
| 所含物品： | 评估板 |
GDBD 4410
On board gate resistors of R Gint = 4,7 ? are
provided between the outputs of the IXBD4410/
4411 ICs and the respective terminals g1...g7.
Total gate resistance R G for operation of the
IGBTs should be adjusted by addition of an
external gate resistor R Gext in each gate wire on
the printed circuit board, connecting the driver
unit and the CBI module, according to:
R G = R Gint + R Gext
It is recommended to use total gate resistors
R G for inverter and brake chopper as specified
in the respective module data sheets. Circuitry
according to figure 1 may be added to adjust
current and voltage change rates during
commutations and for protection purposes.
Figure 1: optional gate circuitry between driver unit and CBI module
Protection Schemes
Symbol
Definitions
Max. Ratings
To assure maximum protection for the power
devices, the driver unit incorporates the following
V DD /V EE
Supply Voltage
-0.5 ... 24
V
IGBT protection schemes:
? protection from cross conduction of the half
bridge, see section Logic Interfaces
? power device overcurrent or desaturation
Symbol
Definitions/Conditions
Characteristic Values
(T VJ = 25°C, V DD = 15 V unless otherwise specified)
min. typ.
max.
protection: The IXBD4410/4411 IC will turn
off the driven device, supposed to be turned
V DD Undervoltage Lockout
on since at least 3 μs typ., within 150 ns of
sensing an output overcurrent or desaturation
condition, i. e. U CE >10 V typ. Measurement
V uv
V uh
Drop out
Hysteresis
9.5
0.1
10.5
0.15
11.5
0.3
V
V
is taken with a resistive voltage divider,
limiting device blocking and thus DC link
VEE Supply (referred to M2467/M1/M3/M5)
voltage to U Z = 800V.
V EEF
Over-voltage fault indication
-4.8
-3
V
? under-voltage gate-drive lockout on the low-
and/or high- side drivers whenever the
Open Drain Fault Output (referred to M2467)
respective positive power supply V DD falls
below 9.5 V typically
? over-voltage gate-drive lockout on the low-
V oh
V ol
HI output / R pu = 10 k ? to V DD
LO output / I o = 4 mA
V DD -0.05
0.3
0.5
V
V
and high- side drivers whenever the respective
negative power supply V EE rises above -3 V
Quiescent Power Supply Current per Driver IC
typically, cf. section Transistor Drive
? During power-up, the chipset’s gate-drive
I DD
V DD current / V in = V DD or LG, I o = 0
20
mA
outputs will be low (off), until the voltage
reaches the supply voltage trip points.
During a status fault, high side or low side driver
IC of the concerned phaselegs keep their
respective outputs off at V EE as long as supplied.
The overcurrent fault condition is latched,
which is reset on the next positive transition of
the respective input PBM1...PBM7, provided
that the fault condition is not applicable any
more.
Further the driver unit provides a logic
compatible fault indication: Activation of open
drain output F indicates a fault in any of the low
or high side drivers. This signal can be utilised
by a superceeding control unit on ground – i.e.
DC link minus – potential, e.g. a microprocessor.
The high level when F is not activated should
be supplied by an external pull up resistor
connected to the appropriate supply voltage.
? 2004 IXYS All rights reserved
4-6
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