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参数资料
| 型号： | GDU90-20721 |
| 厂商： | Dynex Semiconductor Ltd. |
| 英文描述： | CCFL Inverter Module - Dual Lamp; Package: MODULE; IOLAMP (mA): 6.5; |
| 中文描述： | 门驱动装置 |
| 文件页数： | 1/4页 |
| 文件大小： | 37K |
| 代理商： | GDU90-20721 |
GDU 90-20721
1/4
V
1 = +5V
V
2 = +15V
V
3 = -15V
Test circuit GTO
GDU connection to GTO
DG858BW
500mm CO - AX cable type RC5327230
(2 cables in parallel)
s Used with Gate Turn-Off Thyristors in high current switching
applications
I
FGM
40A
I
G(ON)
10A
dI
GQ/dt
50A/
s
APPLICATIONS
CONDITIONS - (UNLESS STATED OTHERWISE)
KEY PARAMETERS
Test circuit emitter and gate drive emitter
Test circuit emitter current
Test circuit receiver and gate drive receiver
Hewlett Packard versatile link HFBR 2524
30mA
Hewlett Packard versatile link HFBR 1524
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
Units
Max.
Typ.
Min.
Symbol
I
V1
-
5.5
A
I
V2
+15V PSU current
500Hz, 50% duty cycle
500Hz
Parameter
-
0.70
A
V
2(Min)
On-state gate current
dI
FG/dt
dI
GQ/dt
Rate of rise of negative gate current
Rate of rise of positive gate current
-
Measured 10 - 75% I
FGM
I
T = 3000A,
90% I
G(ON) - 50% IGQM
3.8
--
V
14.0
--
V
14.0
--
V
--
-
40
-
A/
s
-
50
-
A/
s
+5V PSU current
500Hz, I
T = 3000A
GTO T
j = 125C
-15V PSU current
I
V3
-
12
A
-
V
1(Min)
+5V PSU minimum
+15V PSU minimum
V
3(Min)
-15V PSU minimum
I
FGM
Peak forward gate current
I
G(ON)
40
10
A
ELECTRICAL CHARACTERISTICS
Conditions
GDU 90-20721
Gate Drive Unit
Replaces March 1998 version, DS4567-3.1
DS4567-4.0 January 2000
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PDF描述 |
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| GDU90-20722 | Gate Drive Unit |
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| GDZ11B | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| GDZ12B | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GDU90-20722 | 制造商:DYNEX 制造商全称:Dynex Semiconductor 功能描述:Gate Drive Unit |
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