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参数资料
| 型号： | GDU91-20222 |
| 厂商： | Dynex Semiconductor Ltd. |
| 英文描述： | Gate Drive Unit |
| 中文描述： | 门驱动装置 |
| 文件页数： | 1/4页 |
| 文件大小： | 35K |
| 代理商： | GDU91-20222 |
GDU 91 20222
1/4
s Used with Gate Turn-Off Thyristors in high current switching
applications
APPLICATIONS
KEY PARAMETERS
I
FGM
30A
I
G(ON)
4A
dI
GQ/dt
30A/
s
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
V
1 = +5V
V
2 = +15V
V
3 = -15V
Test circuit GTO
GDU connection to GTO
Test circuit emitter and gate drive emitter
Test circuit emitter current
Test circuit receiver and gate drive receiver
Honeywell sweetspot HFD 3029 - 002
30mA
DG408BP
500mm CO - AX cable type RC5327230
Honeywell sweetspot HFE 4020 - 013
CONDITIONS - (UNLESS STATED OTHERWISE)
Units
Max.
Typ.
Min.
Conditions
Symbol
I
V1
-
2.2
A
I
V2
+15V PSU current
500Hz, 50% duty cycle
500Hz
-
0.55
A
V
2(Min)
On-state gate current
dI
FG/dt
dI
GQ/dt
Rate of rise of negative gate current
Rate of rise of positive gate current
-
Measured 10 - 75% I
FGM
I
T = 1000A,
90% I
G(ON) - 50% IGQM
3.8
--
V
14.0
--
V
14.0
--
V
--
-
30
-
A/
s
-
30
-
A/
s
+5V PSU current
500Hz, I
T = 1000A
GTO T
j = 125C
-15V PSU current
I
V3
-
3.0
A
-
V
1(Min)
+5V PSU minimum
+15V PSU minimum
V
3(Min)
-15V PSU minimum
I
FGM
Peak forward gate current
I
G(ON)
30
4
A
ELECTRICAL CHARACTERISTICS
Parameter
GDU 91-20222
Gate Drive Unit
Replaces March 1998 version, DS4570-3.1
DS4570-4.0 January 2000
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