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参数资料
| 型号： | GE28F640W30TD70 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA56 |
| 封装： | 0.75 MM PITCH, VFBGA-56 |
| 文件页数： | 1/104页 |
| 文件大小： | 1443K |
| 代理商： | GE28F640W30TD70 |
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Order Number: 290702, Revision: 011
June 2005
Intel Wireless Flash Memory (W30)
28F640W30, 28F320W30, 28F128W30
Datasheet
Product Features
The Intel
Wireless Flash Memory (W30) device combines state-of-the-art Intel Flash technology to
provide a versatile memory solution for high performance, low power, board constraint memory
applications. The
W30 flash memory device offers a multi-partition, dual-operation flash architecture
that enables the flash device to read from one partition while programming or erasing in another partition.
This Read-While-Write or Read-While-Erase capability makes it possible to achieve higher data
throughput rates compared to single partition devices. Two processors can interleave code execution,
because program and erase operations can now occur as background processes.
The
W30 flash memory device incorporates an Enhanced Factory Programming (EFP) mode to improve
12 V factory programming performance. This feature helps eliminate manufacturing bottlenecks associated
with programming high-density flash memory devices. The EFP program time is 3.5 s per word,
compared to the standard factory program time of 8.0 s per word, so EFP mode saves significant factory
programming time for improved factory efficiency.
The
W30 flash memory device also includes block lock-down and programmable WAIT signal polarity,
and is supported by an array of software tools.
■
High Performance Read-While-Write/Erase
— Burst Frequency at 40 MHz
— 70 ns Initial Access Speed
— 25 ns Page-Mode Read Speed
— 20 ns Burst-Mode Read Speed
— Burst-Mode and Page-Mode in All Blocks
and across All Partition Boundaries
— Burst Suspend Feature
— Enhanced Factory Programming:
3.5 s per Word Program Time
— Programmable WAIT Signal Polarity
■
Flash Power
—VCC = 1.70 V – 1.90 V
—VCCQ = 2.20 V – 3.30 V
— Standby Current (130 nm) = 8 A (typ.)
— Read Current = 7 mA
(4 word burst, typical)
■
Flash Software
— 5 s/9 s (typ.) Program/Erase Suspend
Latency Time
—Intel
Flash Data Integrator (FDI) and
Common Flash Interface (CFI) Compatible
■
Quality and Reliability
— Operating Temperature:
–40 °C to +85 °C
— 100K Minimum Erase Cycles
— 130 nm ETOX VIII Process
— 180 nm ETOX VII Process
■
Flash Architecture
— Multiple 4-Mbit Partitions
— Dual Operation: RWW or RWE
— Parameter Block Size = 4-Kword
— Main block size = 32-Kword
— Top or Bottom Parameter Blocks
■
Flash Security
— 128-bit Protection Register: 64 Unique
Device Identifier Bits; 64 User OTP
Protection Register Bits
— Absolute Write Protection with VPP at
Ground
— Program and Erase Lockout during Power
Transitions
— Individual and Instantaneous Block
Locking/Unlocking with Lock-Down
■
Density and Packaging
— 130 nm: 32Mb, 64Mb, and 128Mb in VF
BGA Package; 64Mb, 128Mb in QUAD+
Package
— 180 nm: 32Mb and 128Mb Densities in VF
BGA Package; 64Mb Density in BGA*
Package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
— 16-bit Data Bus
Notice: This document contains information on new products in production. The specifications
are subject to change without notice. Verify with your local Intel sales office that you have the
latest datasheet before finalizing a design.
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