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参数资料
| 型号： | GF1D |
| 厂商： | GE Security, Inc. |
| 英文描述： | SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER |
| 中文描述： | 表面贴装结玻璃钝化整流 |
| 文件页数： | 1/2页 |
| 文件大小： | 90K |
| 代理商： | GF1D |
GF1A THRU GF1M
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Ideal for surface mount automotive applications
High temperature metallurgically bonded construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
Built-in strain relief
Easy pick and place
High temperature soldering guaranteed: 450°C/5 seconds
at terminals
Complete device submersible temperature of 265°C for
10 seconds in solder bath
MECHANICAL DATA
Case: JEDEC DO-214BA molded plastic over glass body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.0048 ounces, 0.120 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
GF1A
GF1B
GF1D
GF1G
GF1J
GF1K
GF1M
UNITS
Device marking code
GA
GB
GD
GG
GJ
GK
GM
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
Volts
Maximum average forward rectified current
at TL=125°C
I(AV)
1.0
Amp
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
30.0
Amps
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
VF
1.10
1.20
Volts
Maximum DC reverse current
TA=25°C
5.0
at rated DC blocking voltage
TA=125°C
IR
50.0
A
Typical reverse recovery time (NOTE 1)
trr
2.0
s
Typical junction capacitance (NOTE 2)
CJ
15.0
pF
Typical thermal resistance (NOTE 3)
R
ΘJA
80.0
°C/W
R
ΘJL
26.0
Operating junction and storage temperature range
TJ, TSTG
-65 to +175
°C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied VR=4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
4/98
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.0105 (0.27)
0.030 (0.76)
0.060 (1.52)
0.006
0.152
TYP.
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.106 (2.69)
0.118 (3.00)
0.040 (1.02)
0.060 (1.52)
0.098 (2.49)
0.108 (2.74)
DO-214BA
PA
TENTED*
Dimensions in inches and (millimeters)
*Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead
forming by Patent No. 5,151,846
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GF1D | 制造商:Vishay Semiconductors 功能描述:DIODE SMD 1A 200V |
| GF1D | 制造商:Fairchild Semiconductor Corporation 功能描述:Bridge Rectifier |
| GF1D/1- | 功能描述:整流器 200 Volt 1.0 Amp Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| GF1D/17- | 功能描述:整流器 200 Volt 1.0 Amp Glass Passivated RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| GF1D/1754 | 功能描述:RECTIFIER 200V 1A DO214BA SMD RoHS:否 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
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