参数资料
型号: GF1M
厂商: Fairchild Semiconductor
文件页数: 1/3页
文件大小: 48K
描述: DIODE 1000V 1A DO214AC
标准包装: 1
二极管类型: 标准
电压 - (Vr)(最大): 1000V(1kV)
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 1.2V @ 1A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 2µs
电流 - 在 Vr 时反向漏电: 5µA @ 1000V
电容@ Vr, F: 15pF @ 4V,1MHz
安装类型: 表面贴装
封装/外壳: DO-214AC,SMA
供应商设备封装: DO-214AC(SMA)
包装: 标准包装
其它名称: GF1MDKR
GF1MDKR-ND
GF1MFSDKR
GF1A-GF1M
?2001 Fairchild Semiconductor Corporation
GF1A-GF1M, Rev. G
GF1A - GF1M
General Purpose Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
TA
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
TA
= 25°C unless otherwise noted
Features
?
Low forward voltage drop.
? High current capability.
? Easy pick and place.
? High surge current capability.
Symbol
Parameter
Device
Units
1A 1B 1D 1G 1J 1K 1M
VF
Forward Voltage @ 1.0 A 1.0 1.2 V
trr
Reverse Recovery Time
I
F = 0.5 A, IR = 1.0 A, Irr = 0.25 A
2.0
μs
IR
Reverse Current @ rated VR TA = 25°C
5.0
μA
50
μA
TA = 125°C
CT
Total Capacitance
V
R = 4.0 V, f = 1.0 MHz
15 pF
SMA/DO-214AC
COLOR BAND
DENOTES CATHODE
Symbol
Parameter
Value
Units
1A 1B 1D 1G 1J 1K 1M
VRRM
Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
IF(AV)
Average Rectified Forward Current,
@ TL
= 125°C
1.0 A
IFSM
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
30 A
Tstg
Storage Temperature Range -65 to +175
°C
TJ
Operating Junction Temperature -65 to +175
°C
Symbol
Parameter
Value
Units
PD
Power D
issipation
1.8
W
RθJA
Thermal Resistance, Junction to Ambient* 80
°C/W
RθJL
Thermal Resistance, Junction to Lead* 26
°C/W
Thermal Characteristics
*Device mounted on PCB with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas.
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相关代理商/技术参数
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