参数资料
型号: GHB-RA-G
厂商: International Light Technologies Inc.
英文描述: These small chip-type LEDs utilize high efficient and high brightness InGaN material to deliver competitively priced high performance blue and green.
中文描述: 这些小芯片型LED的利用InGaN材料高效,高亮度,提供高性能的价格竞争力的蓝色和绿色。
文件页数: 2/3页
文件大小: 88K
代理商: GHB-RA-G
Device Selection Guide
Package Dimension (mm)
InGaN Green
InGaN Blue
Package Description
3.2(L) x 1.0(W) x 1.5(H)
HSMQ-C110
HSMR-C110
Untinted, Non-diffused
Notes:1. Dimensions in mm.
2. Tolera±nc0e.1 mm unless otherwise noted.
Absolute Maximum Ratings at TA= 25C
DC Forward Current
20
mA
Power Dissipation
78
mW
Reverse Voltage (IR = 100mA)
5
V
LED Junction Temperature
95
C
Operating Temperature Range
30 to +85
C
Storage Temperature Range
40 to +85
C
Soldering Temperature
See reflow soldering profile (Figures 11 & 12)
Note: 1. Derate linearly as shown in Figure 4.
Parameter
Units
GHB-RA-B
GHB-RA-G
Electrical Characteristics at TA = 25C
Forward Voltage
Reverse Breakdown
Capacitance
Thermal
VF (Volts)
VR (Volts)
(pF), V= 0,
Resistance
@ IF = 20 mA
@ IR=100mA
f = 1 MHz
J-PIN
(C/W)
Part Number
Typ.
Max.
Min.
Typ.
GHB-RA-G
3.4
3.9
5
140
450
GHB-RA-B
3.4
3.9
5
140
450
VF Tolerance±
: 0.1 V
q
R
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