参数资料
型号: GI1402HE3/45
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 100K
描述: DIODE 8A 100V 35NS SGL TO220-2
标准包装: 1,000
二极管类型: 标准
电压 - (Vr)(最大): 100V
电流 - 平均整流 (Io): 8A
电压 - 在 If 时为正向 (Vf)(最大): 975mV @ 8A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 35ns
电流 - 在 Vr 时反向漏电: 5µA @ 100V
安装类型: 通孔
封装/外壳: TO-220-2
供应商设备封装: TO-220AC
包装: 管件
‘? I G|1401, G|1402, G|1403, G|14047 Www'V'Shay'C°m Vishay General Semiconductor
THERMAL cHARAcTERIsTIcs (TA = 25 00 unless otherwise noted)
PARAMETER
Typical thermal resistance ‘W2’
N atesU) Thermal resistance from junction to ambient in free air, no neatsink(2) Thermal resistance from junction to case and ambient mounted on heatsink
PREFERRED P/N UNIT WEIGHT (9)
GI14o1-E3/45 1:31
GI14o1HEs/45(1) 1:31
Note(i) AEC-Q101 qumnied
RATINGS AND cHARAcTERIsTIcs cuRvEs (TA = 25 cc unless otherwise noted)
I2
100
I0
:3
Pulse Width : aoo us1 % Duty Cycle
Instantaneous Forward Current (A)
:3
Average Forward Rectitied Current (A)
m
not
Case Temperature (°C) Instantaneous Forward Voltage (V)
Fig. 1 - Max. Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics
I50 mo
TC : 125 “C
g '25 5.3 ms Single Hall slnewave 3
E 29 g toE J
8 I00 3 A
e a
(3 75 § E T
s 3
S 50 3 o5 E
u- E o I
E e0 0.01
N E
Number of Cycles at 60 HZ Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Leakage Characteristics
Revision: 20?Aug—13 2 Document Number: 88623
For technical questions within your region: DiodesAmericas@vishay.Com, DiodesAsia@vishay.Com, DiodesEurope@vishay.Com
THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vIshay.com/doo?91000
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