参数资料
型号: GI752-E3/73
厂商: Vishay General Semiconductor
文件页数: 2/3页
文件大小: 73K
描述: DIODE 6A 200V SMC P600 AXIAL
标准包装: 300
二极管类型: 标准
电压 - (Vr)(最大): 200V
电流 - 平均整流 (Io): 6A
电压 - 在 If 时为正向 (Vf)(最大): 900mV @ 6A
速度: 标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr): 2.5µs
电流 - 在 Vr 时反向漏电: 5µA @ 200V
安装类型: 通孔
封装/外壳: P600,轴向
供应商设备封装: P600
包装: 带盒(TB)
‘? I G|750, GI751, G|752, GI754, G|756, G|7587 Www'V'Shay'C°m Vishay General Semiconductor
THERMAL cHARAcTERls cs (TA = 25 00 unless otherwise noted)
N ateU) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted with 1.1 “ x 1.1 "(30 mm X 30 mm) Copper pads
ORDER NC INFORMAT on (Example)
PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODEI 13“ diameter paper tape and reel1 Ammo packpackaging
RATINGS AND CHARACTERISTICS CuRvEs (TA = 25 (‘C unless otherwise noted)
5.0
1000
60 Hz Resistive7'0 or inductive Load
60
5.0
4.0
3.0
2.0
VRRM may be Applied BetweenEach Cycle o1Surge.It1e TJNoted ls TJ Prior to Surge
Peak Fonlvard surge Current (A)
é
1.1“xl.l“(3UmmX3Umm)‘>0 Copper Fads
Average FonNard Rectilied Current (A)
0 100 20 40 60 E0 100 120 140 160 150 200
Ambient Temperature (Dc) Number of Cycles at 60 HZ
Fig. 1 — Maximum Forward Current Derating Curve Fig. 3 — Maximum Peak FonNard Surge Current
100
Pulse Width 7 300 us1 % Duty Cycle
3
on
Average FonNard Current (A)
instantaneous Forward Current (A)
0.010 20 40 50 so 100 120 140 160 180 200 05 0.5 1.0 1.2 14 16 15
Lead Temperature (°C) Instantaneous Fonrvard Voltage (\I)
Fig. 2 - Maximum Forward Current Derating Curve Fig. 4 - Typical Instantaneous Forward Characteristics
Revision: 01-Aug-13 2 Document Number: 88627
For technical questions within your region: DiodesArnericas@vishay.corn, DiodesAsia@vishay.com, DiQdesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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