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参数资料
| 型号： | GI917 |
| 厂商： | GE Security, Inc. |
| 英文描述： | MEDIUM-SWITCHING PLASTIC RECTIFIER |
| 中文描述： | 介质交换塑料整流器 |
| 文件页数： | 1/2页 |
| 文件大小： | 44K |
| 代理商： | GI917 |
GI910 THRU GI917
MEDIUM-SWITCHING PLASTIC RECTIFIER
Reverse Voltage - 50 to 800 Volts
Forward Current - 3.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High surge current capability
Construction utilizes void-free molded plastic technique
High forward current operation
Fast switching for high efficiency
High temperature soldering guaranteed:
250°C/10 seconds, 0.375 (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.04 ounce, 1.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
GI910
GI911
GI912
GI914
GI916
GI917
UNITS
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
Volts
Maximum RMS voltage
VRMS
35
70
140
280
420
560
Volts
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
Volts
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=90°C
I(AV)
3.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
100.0
Amps
rated load (JEDEC Method)
Maximum instantaneous forward voltage at:
3.0A
1.25
9.4A, TJ=175°C
VF
1.10
Volts
Maximum DC reverse current
TA=25°C
10.0
at rated DC blocking voltage
TA=100°C
IR
300.0
A
Typical junction capacitance (NOTE 1)
CJ
28.0
pF
Maximum reverse recovery time (NOTE 2)
trr
750
ns
Maximum reverse recovery current
IRM(REC)
2.0
Amps
Typical thermal resistance (NOTE 3)
R
ΘJA
22.0
R
ΘJL
8.0
°C/W
Operating junction and storage temperature range
TJ ,TSTG
-50 to +150
°C
NOTES:
(1) Measured at 1 MHz and applied reverse voltage of 4.0 Volts
(2) Reverse recovery test conditions: IF=1.0A, VR=30V, di/dt=50A/
s, and Irr=10% IRM for measurement of trr
(3) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,
both leads equally heat sink
4/98
0.210 (5.3)
0.190 (4.8)
DIA.
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
DO-201AD
Dimensions in inches and (millimeters)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GI917-E3/51 | 功能描述:二极管 - 通用，功率，开关 800 Volt 3A 750ns 100 Amp IFSM RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| GI917-E3/54 | 功能描述:整流器 800 Volt 3A 750ns 100 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| GI9435 | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI9563 | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GI9575 | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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