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参数资料
| 型号： | GL05T-GS18 |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | DIODE ESD LOW CAP 5V SOT23 |
| 标准包装： | 10,000 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6V |
| 功率（瓦特）： | 300W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
GL05T to GL24T
www.vishay.com
Vishay Semiconductors
Data line
Data line
Data line
n.c.
1
2
1
1
3
n.c.
n.c.
3
3
n.c.
3
n.c.
2
1
2
2
ground
Uni
Unidirectional clamping
performance for po s itive
tran s ient s only.
ground
Bi S y
Bi directional and S y mmetrical
clamping performance for po s itive
and negative tran s ient s .
ground
BiAs
Bi directional and As ymmetrical
clamping performance for po s itive
and negative tran s ient s .
ELECTRICAL CHARACTERISTICS GL05T (T amb = 25 °C unless otherwise specified)
pin 1 to pin 2; pin 3 not connected
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at I R = 20 μA
at V R = 5 V
at I R = 1 mA
at I PP = 1 A
at I PP = 5 A
at V R = 0 V; f = 1 MHz
SYMBOL
N channel
V RWM
V R
I R
V BR
V C
C D
MIN.
-
-
5
-
6.9
-
-
-
TYP.
-
-
-
-
7.5
-
-
2.5
MAX.
1
5
-
20
8.0
9.8
11
5
UNIT
lines
V
V
μA
V
V
V
pF
ELECTRICAL CHARACTERISTICS GL12T (T amb = 25 °C unless otherwise specified)
pin 1 to pin 2; pin 3 not connected
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at I R = 1 μA
at V R = 12 V
at I R = 1 mA
at I PP = 1 A
at I PP = 5 A
at V R = 0 V; f = 1 MHz
SYMBOL
N channel
V RWM
V R
I R
V BR
V C
C D
MIN.
-
-
12
-
13.3
-
-
-
TYP.
-
-
-
-
14.3
-
-
2.5
MAX.
1
12
-
1
17.2
19
24
5
UNIT
lines
V
V
μA
V
V
V
pF
ELECTRICAL CHARACTERISTICS GL15T (T amb = 25 °C unless otherwise specified)
pin 1 to pin 2; pin 3 not connected
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at I R = 1 μA
at V R = 15 V
at I R = 1 mA
at I PP = 1 A
at I PP = 5 A
at V R = 0 V; f = 1 MHz
SYMBOL
N channel
V RWM
V R
I R
V BR
V C
C D
MIN.
-
-
15
-
16.7
-
-
-
TYP.
-
-
-
-
17.7
-
-
2.5
MAX.
1
15
-
1
22
24
33
5
UNIT
lines
V
V
μA
V
V
V
pF
Rev. 1.9, 26-Feb-13
3
Document Number: 85809
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GL05T-HE3-08 | 制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Intertechnologies 功能描述:ESD PROTECTION DIODE SOT23 |
| GL05T-HE3-18 | 制造商:Vishay Intertechnologies 功能描述:ESD PROTECTION DIODE SOT23 |
| GL05T-HG3-08 | 制造商:Vishay Intertechnologies 功能描述:ESD PROTECTION DIODE SOT23 |
| GL05T-HG3-18 | 制造商:Vishay Intertechnologies 功能描述:ESD PROTECTION DIODE SOT23 |
| GL05T-V-G-08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces |
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