参数资料
型号: GLT41116
厂商: Electronic Theatre Controls, Inc.
英文描述: 64k x 16 CMOS Dynamic RAM with Fast Page Mode
中文描述: 64k的× 16的CMOS动态随机存储器的快速页面模式
文件页数: 14/16页
文件大小: 106K
代理商: GLT41116
7
G-LINK Technology
GLT41116
July 1998 (Rev. 1)
CLK
CKE
CE
R/W
tKHKL
Figure 2. Read/Write Timing
ADV/LD
BWn
ADDRESS
D/Q
A1
A2
A3
A4
A5
A6
A7
12
3
tKLKH
tKHKH
4
56789
10
tKHEX
tEVKH
tKHCX
tCVKH
tKHAX
tAVKH
tKHDX
tDVKH
D (A1)
D (A2)
D (A2+1)
Q (A3)
tKHQV
tKHQX1
tKHQX
Q (A4+1)
Q (A4)
D (A5)
D (A6)
D (A7)
OE
tGHQZ
tGLQX
tGLQV
tKHQZ
tKHQX
WRITE D(A1)
WRITE D(A2)
BURST WRITE
D(A1+1)
READ Q(A3)
READ Q(A4)
BURST READ
Q(A4+1)
WRITE D(A5)
READ Q(A6)
WRITE D(A7)
DESELECT
NOTE:
1. For this waveform, ZZ is tied LOW.
2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BURST operations are optional.
3. CE represents three signals. When CE = 0, it represents CE = 0, CE2 = 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most recent data may be from the input data register.
Don’t Care
Undefined
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