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参数资料
| 型号： | GLT44108-45T |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125 |
| 中文描述： | 为512k × 8的CMOS动态RAM的快速页面模式 |
| 文件页数： | 4/16页 |
| 文件大小： | 399K |
| 代理商： | GLT44108-45T |
G-LINK
GLT44108
512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Preliminary Aug 1999 (Rev.2.1
)
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No.24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 4 -
DC and Operating Characteristics (1-2)
TA = 0
°
C to 70
°
C, V
CC
=5V
±
10%, V
SS
=0V, unless otherwise specified.
Sym.
Parameter
Test Conditions
Access
Time
Min.
Typ
Max.
Unit Notes
I
LI
Input Leakage Current
(any input pin)
0V
≤
V
IN
≤
5.5V
(All other pins not under
test=0V)
0V
≤
V
out
≤
5.5V
Output is disabled (Hiz)
-10
+10
μ
A
I
LO
Output Leakage Current
(for High-Z State)
Operating Current,
Random READ/WRITE
-10
+10
μ
A
I
CC1
t
RC
= t
RC
(min.)
t
RAC
= 40ns
t
RAC
= 50ns
t
RAC
= 60ns
150
140
120
mA
1,2
I
CC2
Standby Current,(TTL)
RAS, CAS, at V
IH
other inputs
≥
V
SS
RAS
cycling,
2
mA
I
CC3
Refresh Current,
RAS-Only
CAS at V
IH
t
RC
= t
RC
(min.)
RAS
at V
IL
,
t
RAC
= 40ns
t
RAC
= 50ns
t
RAC
= 60ns
150
140
120
mA
2
I
CC4
Operating Current,
FAST Page Mode
CAS,address
cycling:t
PC
=t
PC
(min.)
t
RAC
= 40ns
t
RAC
= 50ns
t
RAC
= 60ns
150
140
120
mA
1,2
I
CC5
Refresh Current,
CAS Before RAS
RAS,
CAS,
address cycling:
t
RC
=t
RC
(min.)
t
RAC
= 40ns
t
RAC
= 50ns
t
RAC
= 60ns
150
140
120
mA
1
I
CC6
Standby Current, (CMOS)
RAS
≥
V
CC
-0.2V,
CAS
≥
V
CC
-0.2V,
All other inputs
≥
V
SS
1
mA
V
IL
V
IH
V
OL
V
OH
Notes:
1.I
CC
is dependent on output loading when the device output is selected. Specified I
CC(max.)
is measured with the output
open.
2.I
CC
is dependent upon the number of address transitions specified. I
CC(max.)
is measured with a maximum of one transition
per address cycle in random Read/Write and Fast Page Mode.
3. Specified V
IL(min.)
is steady state operation. During transitions, V
IL(min.)
may undershoot to -1.0V for a period
not to exceed 20ns.All AC parameters are measured with V
IL(min.)
≥
V
ss
and V
IH(max.)
≤
V
cc
.
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
-1
2.4
+0.8
V
CC
+1
0.4
V
V
V
V
3
3
I
OL
= 4.2mA
I
OH
= -5mA
2.4
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相关代理商/技术参数 |
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|---|---|
| GLT44108-45TC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT44108-45TQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT44108-45TS | 制造商:未知厂家 制造商全称:未知厂家 功能描述:512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT44108-50FA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| GLT44108-50FB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
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