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参数资料
| 型号： | GLT5160L16 |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM |
| 中文描述： | 1,600（2 -银行甲524288字× 16位）同步DRAM |
| 文件页数： | 11/45页 |
| 文件大小： | 399K |
| 代理商： | GLT5160L16 |
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11
G-LINK Technology
DEC. 2003 (Rev.2.4)
Read
After t
RCD
from the bank activation, a READ command can be
issued. 1st output data is available after the CAS Latency from the
READ, followed by (BL-1) consecutive data when the Burst Length
is BL. The start address is specified by A[7:0], and the address
sequence of burst data is defined by the Burst Type. A READ com-
mand may be applied to any active bank, so the row precharge time
(t
RP
) can be hidden behind continuous output data (in case of BL =
4) by interleaving the dual banks. When A[10] is high at a READ
command, the auto-precharge (READA) is performed. Any com-
mand (READ, WRITE, PRE, ACT) to the same bank is inhibited till
the internal precharge is complete. The internal precharge start tim-
ing depends on CAS Latency. The next ACT command can be
issued after t
RP
from the internal precharge timing.
CLK
Figure 4. Dual Bank Interleaving READ (BL=4, CL=3)
Command
A[9:0]
A[10]
BA
DQ
ACT
REA
ACT
PRE
Qa2
Qa1
Qa0
Qa3
REA
Xa
Ya
Xb
Yb
Xa
0
Xb
0
0
0
0
1
0
1
Burst Length
Qb0
Qb1
Qb2
t
RCD
CAS Latency
CLK
Figure 5. READ with Auto-Precharge (BL=4, CL=3)
Command
A[9:0]
A[10]
BA
DQ
ACT
READ A
ACT
Qa2
Qa1
Qa0
Qa3
t
RCD
Xa
Y
Xa
Xa
1
Xa
0
0
0
t
RP
Internal Precharge begins
CLK
Figure 6. READ Auto-Precharge Timing (BL=4)
Command
CL=3 DQ
CL=2 DQ
ACT
READ A
Internal Precharge Start Timing
Qa2
Qa1
Qa0
Qa3
Qa2
Qa1
Qa0
Qa3
相关PDF资料 |
PDF描述 |
|---|---|
| GLT5160L16-10FJ | 16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM |
| GLT5640AL16 | 4M X 16 CMOS Synchronous Dynamic RAM |
| GLT5640AL16-10TC | 4M X 16 CMOS Synchronous Dynamic RAM |
| GLT5640AL16-5.5TC | 4M X 16 CMOS Synchronous Dynamic RAM |
| GLT5640AL16-6TC | 4M X 16 CMOS Synchronous Dynamic RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GLT5160L16-10FJ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM |
| GLT5160L16-10TC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM |
| GLT5160L16-6FJ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM |
| GLT5160L16-6TC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM |
| GLT5160L16-7FJ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM |
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