参数资料
型号: GLT5640L32-6
厂商: Electronic Theatre Controls, Inc.
英文描述: CMOS Synchronous DRAM 2M x 32 SDRAM
中文描述: 200万的CMOS同步DRAM × 32内存
文件页数: 12/72页
文件大小: 2315K
代理商: GLT5640L32-6
G-LINK
GLT5640AL16
4M X 16 CMOS Synchronous Dynamic RAM
Feb 2004 (Rev.0.1)
G-Link Technology Corporation, Taiwan
Web : www.glink.com.tw Email : sales@glink.com.tw
TEL : 886-2-27968078
- 12 -
Current state
CS
H
L
L
L
L
L
L
L
L
H
RAS
X
H
H
H
H
L
L
L
L
X
CAS
X
H
H
L
L
H
H
L
L
X
WE
X
H
L
H
L
H
L
H
L
X
Address
Command
Action
Notes
X
X
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
Op - Code
X
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
PEF/SELF
MRS
DESL
Continue burst to end
Precharging
Continue burst to end
Precharging
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Continue burst to end
write
recovering with auto precharge
Continue burst to end
write
recovering with auto precharge
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Nop
Enter idle after tRP
Nop
Enter idle after tRP
Nop
Enter idle after tRP
ILLEGAL
ILLEGAL
ILLEGAL
Nop Enter idle after tRP
ILLEGAL
ILLEGAL
Nop
Enter row active after tRCD
Nop
Enter row active after tRCD
Nop
Enter row active after tRCD
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
11
11
3,11
3,11
Read with auto
precharge
L
H
H
H
X
NOP
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
Op - code
X
X
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
Op - Code
X
X
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
Op - Code
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
11
11
3,11
3,11
Write with auto
precharge
3
3
3
Precharging
3
3
3, 9
3
Row activating
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