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参数资料
| 型号： | GM72V66841ET |
| 厂商： | Hynix Semiconductor Inc. |
| 英文描述： | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 2097152字× 8位× 4个银行同步动态RAM |
| 文件页数： | 18/57页 |
| 文件大小： | 592K |
| 代理商： | GM72V66841ET |
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LG Semicon
GM72V66841CT/CLT
Operation of
GM72V661641CT/CLT, GM72V66841CT/CLT,
GM72V66441CT/CLT Series
Bank active:
Before executing a read or write
operation, the corresponding bank and the row
address must be activated by the bank active
(ACTV) command. Bank 0, bank 1, bank 2 or
bank 3 is activated according to the status of the
A12/A13 pin, and the row address (AX0 to
AX11) is activated by the A0 to A11 pins at the
bank active command cycle. An interval of
t
RCD
is required between the bank active command
input and the following read/write command
input.
Read operation:
A read operation starts when a
read command is input. Output buffer becomes
Low-Z in the (CAS Latency - 1) cycle after read
command set.
GM72V66841CT/CLT
can perform a
burst read operation.
Read / Write Operation
The burst length can be set to 1, 2, 4, 8 or full
page(
512;GM72V66841CT/CLT
). The start address
for a burst read is specified by the column
address (
AY0 to AY8; GM72V66841CT/CLT
) and
the bank select address (A12/A13) at the read
command set cycle. In a read operation, data
output starts after the number of cycles specified
by the CAS Latency. The CAS Latency can be
set to 2 or 3.
When the burst length is 1, 2, 4, or 8, the Dout
buffer automatically becomes High-Z at the next
cycle after the successive burst-length data has
been output.
When
(512;GM72V66841CT/CLT) data is repeatedly
output until the burst stop command is input.
the
burst
length
is
full-page
The CAS latency and burst length must be
specified at the mode register.
CAS Latency
CLK
Command
Address
Dout
CL : CAS Latency
Burst Length = 4
ACTV
READ
Row
Column
CL = 2
CL = 3
out 2
out 3
out 1
out 2
out 3
t
RCD
out 0
out 1
out 0
17
相关PDF资料 |
PDF描述 |
|---|---|
| GM72V66841Exx | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ELT-7 | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ELT-75 | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ET-7 | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ET-7K | 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GM72V66841ET-7 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ET-75 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SDRAM |
| GM72V66841ET-7J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SDRAM |
| GM72V66841ET-7K | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM |
| GM72V66841ET-8 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SDRAM |
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