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参数资料
| 型号： | GMBTH10 |
| 厂商： | GTM CORPORATION |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 206K |
| 代理商： | GMBTH10 |
1/2
ISSUED DATE :2005/03/16
REVISED DATE :2005/11/22B
G
G M
M B
B T
T H
H 1100
N
N P
P N
N E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GMBTH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.
Features
&High frequency
&Very low capacitance
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
1.90 REF.
B
2.40
2.80
H
1.00
1.30
C
1.40
1.60
K
0.10
0.20
D
0.35
0.50
J
0.40
-
E
0
0.10
L
0.85
1.15
F
0.45
0.55
M
0°
10°
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55~+150
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
25
V
Emitter to Base Voltage
VEBO
3
V
Collector Current
IC
50
mA
Total Power Dissipation
PD
225
mW
Electrical Characteristics(Ta = 25 : ,unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
30
-
V
IC=100uA, IE=0
BVCEO
25
-
V
IC=1mA, IB=0
BVEBO
3
-
V
IE=10uA, IC=0
ICBO
-
100
nA
VCB=25V, IE=0
IEBO
-
100
nA
VEB=2V, IC=0
VCE(sat)
-
500
mV
IC=4mA, IB=0.4mA
VBE(on)
-
950
mV
VCE=10V, IC=4mA
hFE
60
-
VCE=10V, IC=4mA
fT
650
-
MHz
VCE=10V, IC=4mA, f=100MHz
Cob
-
0.8
-
pF
VCB=10V, f=1MHz
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