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参数资料
| 型号： | GMPSA94S |
| 厂商： | GTM CORPORATION |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 进步党外延平面晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 149K |
| 代理商： | GMPSA94S |
GMPSA94S
Page: 1/2
ISSUED DATE :2006/10/13
REVISED DATE :
G
G M
M P
P S
S A
A9944S
S
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A LL P
P LL A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GMPSA94S is designed for application that requires high voltage.
Features
*High Breakdown Voltage:-400(Min) at IC=-1mA
*High current Gain: IC=-300mA at 25 :
*Complementary to GMPSA44S
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.45
4.7
D
4.44
4.7
S1
1.02
-
E
3.30
3.81
b
0.36
0.51
L
12.70
-
b1
0.36
0.76
e1
1.150
1.390
C
0.36
0.51
e
2.42
2.66
Absolute Maximum Ratings (Ta = 25 ,
: unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
-400
V
Collector to Emitter Voltage
VCEO
-400
V
Emitter to Base Voltage
VEBO
-6
V
Collect Current(DC)
IC
-300
mA
Junction Temperature
Tj
+150
Storage Temperature Range
TsTG
-55 ~ +150
Total Power Dissipation
PD
625
mW
Electrical Characteristics (Ta = 25 ,
: unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-400
-
V
IC=-100uA, IE=0
BVCEO
-400
-
V
IC=-1mA, IB=0
BVEBO
-6
-
V
IE=-10uA, IC=0
ICBO
-
-100
nA
VCB=-400V, IE=0
IEBO
-
-100
nA
VEB=-4V, IC=0
ICES
-
-500
nA
VCE=-400V, VBE=0
VCE(sat)1
-
-350
mV
IC=-1mA, IB=-0.1mA
VCE(sat)2
-
-500
mV
IC=-10mA, IB=-1mA
VCE(sat)3
-
-750
mV
IC=-50mA, IB=-5mA
VBE(sat)
-
-750
mV
IC=-10mA, IB=-1mA
hFE1
40
-
VCE=-10V, IC=-1mA
hFE2
50
-
300
VCE=-10V, IC=-10mA
hFE3
45
-
VCE=-10V, IC=-50mA
hFE4
20
-
VCE=-10V, IC=-100mA
Classification of hFE2
Rank
N
NS
SD
SUM
Range
50-300
70-300
70-210
120-300
VCE(sat)2:IC=-10mA, IB=-1mA
-
<200mV
-
hFE: VCE=3V, IC=100mA
-
>50
-
L
e 1
b
e
S E A T IN G
P L A N E
b 1
A
D
C
S 1
E
TO-92
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