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参数资料
| 型号： | GMSD1664 |
| 厂商： | GTM CORPORATION |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 200K |
| 代理商： | GMSD1664 |
CORPORATION
1/2
ISSUED DATE :2005/03/04
REVISED DATE :
GM SD1664
N
N P
P N
N E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GMSD1664 is designed for general purpose amplifier applications.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.4
4.6
G
3.00 REF.
B
4.05
4.25
H
1.50 REF.
C
1.50
1.70
I
0.40
0.52
D
1.30
1.50
J
1.40
1.60
E
2.40
2.60
K
0.35
0.41
F
0.89
1.20
L
5 q TYP.
M
0.70 REF.
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCEO
32
V
Emitter to Base Voltage
VEBO
5
V
Collector Current at Ta=25 :
IC
1
A
Total Power Dissipation at Ta=25 :
PD
500
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
40
-
V
IC=50uA
BVCEO
32
-
V
IC=1mA
BVEBO
5
-
V
IE=50uA
ICBO
-
500
nA
VCE=20V
IEBO
-
500
nA
VEB=4V
VCE(sat)
-
0.15
0.4
V
IC=500mA, IB=50mA
hFE
82
-
390
VCE=3V, IC=100mA
fT
-
150
-
MHz
VCE=5V, IE=-50mA, f=100MHz
Cob
-
9
-
pF
VCB=10V, IE=0mA, f=1MHz
Classification Of hFE
Rank
P
Q
R
hFE
82-180
120-270
180-390
SOT-89
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