参数资料
型号: GMZJ13B
元件分类: 齐纳二极管
英文描述: 12.88 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封装: ROHS COMPLIANT, GLASS, MICROMELF-2
文件页数: 5/5页
文件大小: 166K
代理商: GMZJ13B
PAGE . 5
STAD-SEP.14.2004
Fig. 7 Forward Current vs. Forward Voltage
Fig. 8 Z-Current vs. Z-Voltage
0
0.2
0.4
0.6
0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
I
Forward
Current
(
m
A
)
F
VF – Forward Voltage(V)
Tj=25°C
04
8
12
16
20
95 9604
0
20
40
60
80
100
I
Z-Current
(
m
A
)
Z
VZ – Z-Voltage(V)
Ptot=500mW
Tamb=25°C
Fig. 9 Z-Current vs. Z-Voltage
Fig. 10 Differential Z-Resistance vs. Z-Voltage
15
20
25
30
0
10
20
30
40
50
I
Z-Current
(
m
A
)
Z
VZ – Z-Voltage(V)
35
95 9607
Ptot=500mW
Tamb=25°C
0
5
10
15
20
1
10
100
1000
r
Dif
ferential
Z-Resistance
(
)
Z
VZ – Z-Voltage(V)
25
95 9606
Tj=25°C
IZ=1mA
5mA
10mA
1
10
100
1000
Z
Thermal
Resistance
for
Pulse
Cond.(K/W
)
thp
tp – Pulse Length ( ms )
95 9603
10–1
100
101
102
tp/T=0.5
tp/T=0.2
tp/T=0.1
tp/T=0.05
tp/T=0.02
tp/T=0.01
Single Pulse
RthJA=300K/W
T=Tjmax–Tamb
iZM=(–VZ+(VZ2+4rzj
T/Zthp)1/2)/(2rzj)
x
Fig. 11 Thermal Response
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