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参数资料
| 型号： | GMZJ27DT/R |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 26.97 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封装： | ROHS COMPLIANT, GLASS, MICROMELF-2 |
| 文件页数： | 4/5页 |
| 文件大小： | 166K |
| 代理商： | GMZJ27DT/R |
PAGE . 4
STAD-SEP.14.2004
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Fig. 1 Thermal Resistance vs. Lead Length
Fig. 2 Total Power Dissipation vs. Ambient Temperature
Fig. 3 Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
95 9611
0
5
10
15
0
100
200
300
400
500
20
R
–
Therm.Resist.
Junction
/
Ambient
(
K/W
)
thJA
l – Lead Length ( mm )
ll
TL=constant
0
40
80
120
160
0
100
300
400
500
600
P
–T
otal
Power
Dissipation
(m
W
)
tot
Tamb– Ambient Temperature(°C )
200
95 9602
200
0
5
10
15
20
1
10
100
1000
V
–
V
oltage
Change
(
m
V
)
Z
VZ – Z-Voltage(V)
25
95 9598
IZ=5mA
Tj=25°C
Fig. 4 Typical Change of Working Voltage vs. Junction
Temperature
Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage
Fig. 6 Diode Capacitance vs. Z-Voltage
–60
0
60
120
180
0.8
0.9
1.0
1.1
1.2
1.3
V
–
Relative
V
oltage
Change
Ztn
Tj – Junction Temperature (°C )
240
95 9599
VZtn=VZt/VZ(25°C)
TKVZ=10 x 10–4/K
8x 10–4/K
–4 x 10–4/K
6x 10–4/K
4x 10–4/K
2x 10–4/K
–2 x 10–4/K
0
010
20
30
–5
0
5
10
15
TK
–
T
emperature
Coef
ficient
of
V
(
10
/K
)
VZ
VZ – Z-Voltage(V)
50
95 9600
40
Z
–4
IZ=5mA
0
5
10
15
0
50
100
150
200
C
–
Diode
Capacitance
(
p
F
)
D
VZ – Z-Voltage(V)
25
95 9601
20
Tj=25°C
VR=2V
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