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SILICON TRANSISTOR
GN4xxx
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
DATA SHEET
Document No. D16490EJ3V0DS00 (3rd edition)
Date Published December 2005 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
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FEATURES
Compact package
Resistors built-in type
Complementary to GA4xxx
ORDERING INFORMATION
PART NUMBER
PACKAGE
GN4xxx
SC-70
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
Note1
V
Collector Current (DC)
IC
0.1
A
Collector Current (pulse)
Note2
IC(pulse)
0.2
A
Total Power Dissipation
PT
0.15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note 1.
PART NUMBER
VEBO
(V)
MARK
R1
(k
Ω)
R2
(k
Ω)
PART NUMBER
VEBO
(V)
MARK
R1
(k
Ω)
R2
(k
Ω)
GN4A4M
10
NA1
10.0
GN4L4L
15
NK1
47.0
22.0
GN4F4M
10
NB1
22.0
GN4A4Z
5
NL1
10.0
GN4L4M
10
NC1
47.0
GN4F4Z
5
NM1
22.0
GN4L3M
10
ND1
4.7
GN4L4Z
5
NN1
47.0
GN4L3N
5
NE1
4.7
10.0
GN4F3M
10
NP1
2.2
GN4L3Z
5
NF1
4.7
GN4F3P
5
NQ1
2.2
10.0
GN4A3Q
5
NG1
1.0
10.0
GN4F3R
5
NR1
2.2
47.0
GN4A4P
5
NH1
10.0
47.0
GN4A4L
15
NS1
10.0
4.7
GN4F4N
5
NJ1
22.0
47.0
GN4L4K
25
NT1
47.0
10.0
Note 2. PW
≤ 10 ms, Duty Cycle ≤ 50%
PACKAGE DRAWING (Unit: mm)
2.1
±
0.1
1.25
±
0.1
3
21
2.0
± 0.2
0.65
0.3 +
0.1
0
0.65
0.3 +
0.1
0
0.3
0.9
± 0.1
0.15 +
0.1
0.05
0 to 0.1
Marking
EQUIVALENT CIRCUIT
2
R1
R2
1
3
PIN CONNECTION
1: Emitter
2: Base
3: Collector
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